onsemi FDG311N
$ 0.19
Obsolete
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Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
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Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi FDG311N.
Supply Chain
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2000-01-03
Lifecycle StatusObsolete (Last Updated: 1 week ago)
LTB Date2020-11-13
LTD Date2021-05-13
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 1 week ago)
Parti correlate
Descrizioni
Descrizioni di onsemi FDG311N fornite dai suoi distributori.
N-Channel PowerTrench® MOSFET, 2.5V Specified, 1.9 A, 115 mΩ
20V N-Fet 130 Mo To220 Rohs Compliant: Yes
Trans MOSFET N-CH 20V 1.9A 6-Pin SC-88 T/R
Small Signal Field-Effect Transistor, 1.9A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
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Specifiche tecniche
Physical
Case/PackageSC
Contact PlatingTin
MountSurface Mount
Number of Pins6
Number of Terminals6
Weight28 mg
Technical
Continuous Drain Current (ID)1.9 A
Current Rating1.9 A
Drain to Source Breakdown Voltage20 V
Drain to Source Resistance105 mΩ
Drain to Source Voltage (Vdss)20 V
Element ConfigurationSingle
Fall Time9 ns
Gate to Source Voltage (Vgs)8 V
Input Capacitance270 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation750 mW
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Nominal Vgs900 mV
Number of Channels1
Number of Elements1
PackagingTape & Reel (TR)
Power Dissipation480 mW
Rds On Max115 mΩ
Rise Time9 ns
Schedule B8541210080
Threshold Voltage900 mV
Turn-Off Delay Time10 ns
Turn-On Delay Time5 ns
Voltage Rating (DC)20 V
Dimensions
Height1.1 mm
Length2 mm
Width1.25 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi FDG311N.
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità