onsemi FDFS6N754
Obsolete
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Modelli CAD
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|---|---|---|---|
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2006-09-07
Lifecycle StatusObsolete (Last Updated: 3 days ago)
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 3 days ago)
Parti correlate
VishaySI4936CDY-T1-GE3
Dual N-Channel 30 V 0.04 Ohm 2.3 W Surface Mount Power Mosfet - SOIC-8
VishaySI4532ADY-T1-E3
SI4532ADY-T1-E3 DUAL N/P-CHANNEL MOSFET TRANSISTOR, 3 A, 3.7 A, 30 V, 8-PIN SOIC
Descrizioni
Descrizioni di onsemi FDFS6N754 fornite dai suoi distributori.
Integrated N-Channel PowerTrench® MOSFET and Schottky Diode 30V , 4A, 56mΩ
N-Channel 30 V 56 mOhm Integrated PowerTrench® Mosfet SOIC-8
Trans MOSFET N-CH 30V 4A 8-Pin SOIC N T/R
MOSFET, N, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:4A; Drain Source Voltage Vds:30V; On Resistance Rds(on):56mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; Power Dissipation Pd:2W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Capacitance Ciss Typ:225pF; Current Id Max:4A; On State Resistance Max:56mohm; Package / Case:SOIC; Pin Configuration:A(1&2), S(3), G(4), C(7&8), D(6&5); Power Dissipation Pd:2W; Power Dissipation Pd:2W; Pulse Current Idm:20A; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.5V; Voltage Vgs th Min:1V
The FDFS6N754 combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SO- 8 package.This device is designed specifically as a single package solution for DC to DC converters. It features a fast switching, low gate charge MOSFET with very low on-state resistance. The independently connected Schottky diode allows its use in a variety of DC/DC converter topologies.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Specifiche tecniche
Physical
Case/PackageSOIC
Contact PlatingTin
MountSurface Mount
Number of Pins8
Number of Terminals8
Weight230.4 mg
Technical
Continuous Drain Current (ID)4 A
Current Rating4 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance56 mΩ
Drain to Source Voltage (Vdss)30 V
Dual Supply Voltage30 V
Element ConfigurationSingle
Fall Time2 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance299 pF
Max Operating Temperature150 °C
Max Power Dissipation2 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs1.7 V
Number of Elements1
Power Dissipation2 W
Rds On Max56 mΩ
Resistance56 mΩ
Rise Time8 ns
TerminationSMD/SMT
Threshold Voltage1.7 V
Turn-Off Delay Time20 ns
Turn-On Delay Time6 ns
Voltage Rating (DC)30 V
Dimensions
Height1.5 mm
Length5 mm
Width4 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità