onsemi NDS9952A
$ 0.475
Obsolete
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Verical | NDS9952A | 1236 | 656 | |||||||||
| Rochester Electronics | NDS9952A | 1864 | 2d | |||||||||
| Win Source | WS-NDS9952A | 2905 | 185 | 19h | ||||||||
| ICPartonline | NDS9952A | 16.504 | >1wk | |||||||||
| Worldway Electronics | NDS9952A | 26.671 | 7 | Tape & Reel | 18h |
Cronologia dell'inventario
Tendenza a 3 mesi: -6.11%
Modelli CAD
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Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi NDS9952A.
Modelli CAD
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| FONTE | eCAD | mCAD | FILE |
|---|---|---|---|
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1995-01-01
Lifecycle StatusObsolete (Last Updated: 4 days ago)
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 4 days ago)
Parti correlate
InfineonIRF7306PBF
MOSFET, Power;Dual P-Ch;VDSS -30V;RDS(ON) 0.1Ohm;ID -3.6A;SO-8;PD 2W;VGS +/-20V
InfineonIRF7306TRPBF
MOSFET, Power;Dual P-Ch;VDSS -30V;RDS(ON) 0.1Ohm;ID -3.6A;SO-8;PD 2W;VGS +/-20V
InfineonIRF7326D2TRPBF
2W(Ta) 20V 1V@ 250¦ÌA 25nC@ 10 V 1P 30V 100m¦¸@ 1.8A,10V 3.6A 440pF@25V SOIC-8 1.5mm
Descrizioni
Descrizioni di onsemi NDS9952A fornite dai suoi distributori.
Trans MOSFET N/P-CH 30V 3.7A/2.9A 8-Pin SOIC N T/R
Dual N & P-Channel Enhancement Mode Field Effect Transistor 30V
Power Field-Effect Transistor, 3.7A I(D), 30V, 0.08ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual N/P Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:3.7A; On Resistance, Rds(on):80mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:8-SOIC ;RoHS Compliant: Yes
MOSFET N & P CH 30V 3.7/-2.9A 8SOIC; Transistor Type:MOSFET; Transistor Polarity:N/P ; Voltage, Vds Typ:30V; Current, Id Cont:3.7A; On State Resistance:80mohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1.7V; Case Style:SOIC; Termination Type:SMD; Operating Temperature Range:-55°C to +150°C
These dual N- and P-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: -6.11%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Specifiche tecniche
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Number of Terminals8
Weight230.4 mg
Technical
Continuous Drain Current (ID)3.7 A
Current Rating2.9 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance80 mΩ
Drain to Source Voltage (Vdss)30 V
Dual Supply Voltage30 V
Element ConfigurationDual
Fall Time8 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance320 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs1.7 V
Number of Channels2
Number of Elements2
PackagingCut Tape
Power Dissipation900 mW
Rds On Max80 mΩ
Resistance80 MΩ
Rise Time21 ns
Schedule B8541290080
TerminationSMD/SMT
Threshold Voltage1.7 V
Turn-Off Delay Time21 ns
Dimensions
Height1.75 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi NDS9952A.
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità