onsemi FDD8770
$ 0.452
EOL
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Cronologia dell'inventario
Tendenza a 3 mesi: -2.50%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
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Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi FDD8770.
Scheda dati ufficiale10 anni fa
Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2006-04-12
Lifecycle StatusEOL (Last Updated: 3 days ago)
LTB Date2022-12-30
LTD Date2023-06-30
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 3 days ago)
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30V Single N-Channel HEXFET Power MOSFET in a 3.3mm X 3.3mm PQFN package, PG-TSDSON-8, RoHS
Descrizioni
Descrizioni di onsemi FDD8770 fornite dai suoi distributori.
PowerTrench® MOSFET, N-Channel, 25V, 35A, 4.0mΩ
Power Field-Effect Transistor, 35A I(D), 25V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
N CHANNEL MOSFET, 25V, 35A TO-252AA; Tra; N CHANNEL MOSFET, 25V, 35A TO-252AA; Transistor Polarity:N Channel; Continuous Drain Current Id:35A; Drain Source Voltage Vds:25V; On Resistance Rds(on):4.8mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs:1.6V; No. of Pins:3
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low r DS(on) and fast switching speed.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: -2.50%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Specifiche tecniche
Physical
Case/PackageTO-252-3
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight260.37 mg
Technical
Continuous Drain Current (ID)35 A
Current Rating35 A
Drain to Source Breakdown Voltage25 V
Drain to Source Resistance5.5 mΩ
Drain to Source Voltage (Vdss)25 V
Element ConfigurationSingle
Fall Time25 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance3.72 nF
Max Operating Temperature175 °C
Max Power Dissipation115 W
Min Breakdown Voltage25 V
Min Operating Temperature-55 °C
Nominal Vgs1.6 V
Number of Elements1
Power Dissipation115 W
Rds On Max4 mΩ
Resistance4 MΩ
Rise Time12 ns
Threshold Voltage1.6 V
Turn-Off Delay Time49 ns
Turn-On Delay Time10 ns
Voltage Rating (DC)25 V
Dimensions
Height6.35 mm
Length6.35 mm
Width6.35 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi FDD8770.
Scheda dati ufficiale10 anni fa
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità