onsemi FDD86110

Shielded Gate PowerTrench® MOSFET, N-Channel, 100 V, 50 A, 10.2 mΩ
$ 1.41
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Technical Drawing1 pagina6 anni fa

Master Electronics

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onsemi

Fairchild Semiconductor

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Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2011-10-13
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

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Trans MOSFET N-CH 100V 43A 3-Pin(2+Tab) DPAK T/R

Descrizioni

Descrizioni di onsemi FDD86110 fornite dai suoi distributori.

Shielded Gate PowerTrench® MOSFET, N-Channel, 100 V, 50 A, 10.2 mΩ
Trans MOSFET N-CH Si 100V 12.5A 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 100V 12.5A DPAK-3
Power Field-Effect Transistor, 12.5A I(D), 100V, 0.0102ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
MOSFET, N CH, 100V, 50A, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0085ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.8V; Power Dissipation Pd:127W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-252; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)

Alias del produttore

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  • ONSEMIC
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  • OSC
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  • ON Semiconductor / Fairchild
  • SCG
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  • ON SEMICONDUCTOR CORP
  • onsemi / Fairchild
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  • ON Semiconductor Corporation
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  • ON SEMICONDUCT
  • ON-SEMI SCG
  • ON Semiconductor Inc.
  • onsemiconductor
  • On Semiconductor Ltd