onsemi FDD8445
$ 0.555
EOL
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Cronologia dell'inventario
Tendenza a 3 mesi: -42.17%
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2005-12-01
Lifecycle StatusEOL (Last Updated: 1 week ago)
LTB Date2026-01-01
LTD Date2026-07-01
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 1 week ago)
Parti correlate
InfineonIPD040N03LGATMA1
MOSFET N-CH 30V 90A TO252-3 N-Channel 30 V 90A (Tc) 79W (Tc) Surface Mount PG-TO252-3-11
InfineonIPD036N04LGBTMA1
MOSFET N-CH 40V 90A TO252-3 / N-Channel 40 V 90A (Tc) 94W (Tc) Surface Mount PG-TO252-3
InfineonIPD075N03LGATMA1
MOSFET N-CH 30V 50A TO252-3 N-Channel 30 V 50A (Tc) 47W (Tc) Surface Mount PG-TO252-3-11
Descrizioni
Descrizioni di onsemi FDD8445 fornite dai suoi distributori.
onsemi N-Ch Enhancement MOSFET PowerTrench Series, Vds=40V, 70A, DPAK (TO-252), SMD, 3-Pin
PowerTrench® MOSFET, N-Channel, 40V, 50A, 8.7mΩ
N-Channel 40 V 50 A 8.7 mOhm Surface Mount PowerTrench Mosfet TO-252-3
Trans MOSFET N-CH 40V 70A Automotive 3-Pin(2+Tab) TO-252 T/R
Power Field-Effect Transistor, 70A I(D), 40V, 0.0087ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
MOSFET, N, D-PAK; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:40V; Current, Id Cont:15.2A; Resistance, Rds On:0.0067ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:2.8V; Case Style:DPAK; Termination Type:SMD; Alternate Case Style:TO-252; Application Code:GP; Current, Idm Pulse:85A; External Depth:10.5mm; External Length / Height:2.55mm; No. of Pins:3; Power, Pd:79W; SMD Marking:FDD8445; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Thermal Resistance, Junction to Case A:1.9°C/W; Time, trr Typ:39ns; Voltage, Rds Measurement:10V; Voltage, Vds Max:40V; Voltage, Vgs th Max:4V; Voltage, Vgs th Min:2V; Width, External:6.8mm
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: -42.17%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
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Specifiche tecniche
Physical
Case/PackageTO-252
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)70 A
Current50 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance8.7 mΩ
Drain to Source Voltage (Vds)40 V
Dual Supply Voltage40 V
Element ConfigurationSingle
Fall Time9.6 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance4.05 nF
Max Operating Temperature175 °C
Max Power Dissipation79 W
Min Breakdown Voltage40 V
Min Operating Temperature-55 °C
Nominal Vgs2.8 V
Number of Elements1
Power Dissipation79 W
Rds On Max8.7 mΩ
Resistance8.7 MΩ
Reverse Recovery Time39 ns
Rise Time82 ns
Schedule B8541290080
TerminationSMD/SMT
Threshold Voltage2.8 V
Turn-Off Delay Time26 ns
Turn-On Delay Time10 ns
Voltage40 V
Dimensions
Height2.39 mm
Length6.73 mm
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCAffected
RoHSCompliant
Dichiarazioni di conformità