onsemi FDD5N60NZTM

N-Channel Power MOSFET, UniFETTM II, 600 V, 4 A, 2 Ω, DPAK
$ 0.587
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Technical Drawing1 pagina3 anni fa

IHS

Master Electronics

onsemi

Fairchild Semiconductor

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Parti alternative

Questo componente
Parti alternative
Price @ 1000
$ 0.587
$ 0.86
Stock
893,706
1,149,230
Authorized Distributors
6
2
Mount
Surface Mount
-
Case/Package
DPAK
DPAK
Drain to Source Voltage (Vdss)
600 V
600 V
Continuous Drain Current (ID)
4 A
2.6 A
Threshold Voltage
-
3.9 V
Rds On Max
2 Ω
2 Ω
Gate to Source Voltage (Vgs)
25 V
30 V
Power Dissipation
83 W
83 W
Input Capacitance
600 pF
640 pF

Supply Chain

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2012-09-26
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

Parti correlate

STMicroelectronicsSTD5NK60ZT4
N-CHANNEL 600V - 1.2 Ohm - 5A DPAK Zener-Protected SuperMESH™ Power MOSFET
STMicroelectronicsSTD4NK60ZT4
N-channel 600 V, 1.76 Ohm, 4 A SuperMESH(TM) Power MOSFET in DPAK
N-Channel Power MOSFET, UniFETTM II, 500 V, 4 A, 1.5 Ω, DPAK
N-Channel Power MOSFET, UniFETTM II, FRFET®, 500 V, 3.7 A, 1.75 Ω, DPAK
STMicroelectronicsSTD5N52K3
N-channel 525 V, 1.2 Ohm typ., 4.4 A SuperMESH3(TM) Power MOSFET in DPAK package
onsemiFDD4N60NZ
N-Channel Power MOSFET, UniFETTM II, 600 V, 3.4 A, 2.5 Ω, DPAK

Descrizioni

Descrizioni di onsemi FDD5N60NZTM fornite dai suoi distributori.

N-Channel Power MOSFET, UniFETTM II, 600 V, 4 A, 2 Ω, DPAK
UNIFET2 600V N-CHANNEL MOSFET, DPAK - TO252 (D-PAK), MOLDED, 3 LEAD,OPTION AA&AB
Power Field-Effect Transistor, 4A I(D), 600V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
MOSFET, N-CH, 600V, 4A, 83W, TO-252; Transistor Polarity: N Channel; Continuous Drain Current Id: 4A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 1.65ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Po
UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.

Alias del produttore

onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:

  • ON Semiconductor
  • ONS
  • ONSEMICON
  • ON SEM
  • ON SEMICONDUCTO
  • ON SEMICONDUCTORS
  • ONSEMIC
  • ON Semicondu
  • OSC
  • ONSE
  • ON SEMICOND
  • ON Semiconductor / Fairchild
  • SCG
  • ON Semiconductor Cor
  • ON SEMICO
  • ONSM
  • ON SEMICONDUCTOR CORP
  • onsemi / Fairchild
  • MOT/ON SEMI
  • Fairchild/ONSemiconductor
  • ON Semiconductor Corporation
  • ON4
  • ON Semi - ON Semiconductor
  • ON SEMICONDUCT
  • ON-SEMI SCG
  • ON Semiconductor Inc.
  • onsemiconductor
  • On Semiconductor Ltd