onsemi FDD4N60NZ
$ 0.324
EOL
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2012-09-17
Lifecycle StatusEOL (Last Updated: 4 days ago)
LTB Date2022-12-30
LTD Date2023-06-30
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 4 days ago)
Parti correlate
STMicroelectronicsSTD4NK60ZT4
N-channel 600 V, 1.76 Ohm, 4 A SuperMESH(TM) Power MOSFET in DPAK
VishayIRFR420TRPBF
Single N-Channel 500 V 3 O 19 nC Surface Mount Power Mosfet - TO-252 (DPAK)
Descrizioni
Descrizioni di onsemi FDD4N60NZ fornite dai suoi distributori.
N-Channel Power MOSFET, UniFETTM II, 600 V, 3.4 A, 2.5 Ω, DPAK
N-CHANNEL UNIFET II MOSFET Power Field-Effect Transistor, 3.4A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
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Specifiche tecniche
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight260.37 mg
Technical
Continuous Drain Current (ID)3.4 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance2.5 Ω
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time12.8 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance510 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation114 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingTape & Reel (TR)
Power Dissipation114 W
Rds On Max2.5 Ω
Rise Time15.1 ns
Turn-Off Delay Time30.2 ns
Turn-On Delay Time12.7 ns
Dimensions
Height2.517 mm
Length6.73 mm
Width6.22 mm
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità