onsemi FDD306P
$ 0.488
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Cronologia dell'inventario
Tendenza a 3 mesi: -20.34%
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Schede tecniche e documenti
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2005-01-14
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Parti correlate
STMicroelectronicsSTD7NS20T4
N-channel 200 V, 0.35 Ohm typ., 7 A Power MOSFET in DPAK package
Diodes Inc.DMG4511SK4-13
Mosfet, Dual, N/P-Ch, 35V, 5.3A Rohs Compliant: Yes |Diodes Inc. DMG4511SK4-13
Descrizioni
Descrizioni di onsemi FDD306P fornite dai suoi distributori.
P-Channel PowerTrench® MOSFET, 1.8V Specified, -12V, -6.7A, 28mΩ
Trans MOSFET P-CH 12V 6.7A 3-Pin(2+Tab) DPAK T/R / MOSFET P-CH 12V 6.7A DPAK
Single P-Channel 12 V 52 W 21 nC Silicon Surface Mount Mosfet - TO-252-3
Power Field-Effect Transistor, 6.7A I(D), 12V, 0.028ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
This P-Channel 1.8V Specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management.
MOSFET, P, TO-252; Transistor Polarity:P Channel; Continuous Drain Current Id:6.7A; Drain Source Voltage Vds:12V; On Resistance Rds(on):90mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-500mV; Power Dissipation Pd:52W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D-PAK; Current Id Max:-6.7A; Package / Case:DPAK; Power Dissipation Pd:52W; Power Dissipation Pd:52W; Pulse Current Idm:54A; Termination Type:SMD; Voltage Vds Typ:-12V; Voltage Vgs Max:-8V; Voltage Vgs Rds on Measurement:-4.5V
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: -20.34%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
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Specifiche tecniche
Physical
Case/PackageTO-252
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight260.37 mg
Technical
Continuous Drain Current (ID)6.7 A
Current Rating-6.7 A
Drain to Source Breakdown Voltage-12 V
Drain to Source Resistance28 mΩ
Drain to Source Voltage (Vdss)-12 V
Dual Supply Voltage-12 V
Element ConfigurationSingle
Fall Time41 ns
Gate to Source Voltage (Vgs)8 V
Input Capacitance1.29 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation52 W
Min Breakdown Voltage12 V
Min Operating Temperature-55 °C
Nominal Vgs-500 mV
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation1.6 W
Rds On Max28 mΩ
Resistance90 MΩ
Rise Time8 ns
Schedule B8541290080
Threshold Voltage-500 mV
Turn-Off Delay Time34 ns
Turn-On Delay Time16 ns
Voltage Rating (DC)-12 V
Dimensions
Height2.39 mm
Length6.73 mm
Width6.22 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi FDD306P.
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità