onsemi FDD6685
$ 0.491
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Tendenza a 3 mesi: +9.94%
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Schede tecniche e documenti
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2004-03-09
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Parti correlate
STMicroelectronicsSTD30NF03LT4
N-channel 30 V, 0.02 Ohm typ., 30 A StripFET(TM) II PowerMOSFET in a DPAK package
Descrizioni
Descrizioni di onsemi FDD6685 fornite dai suoi distributori.
P-Channel PowerTrench® MOSFET, 30V, -40A, 20mΩ
P-Channel 30 V 20 mOhm Surface Mount PowerTrench Mosfet TO-252-3
Trans MOSFET P-CH 30V 11A Automotive 3-Pin(2+Tab) TO-252AA T/R
30V P-CHANNEL POWERTRENCH MOSFET Power Field-Effect Transistor, 11A I(D), 30V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
MOSFET, P, SMD, TO-252; Transistor Polarity:P Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):20mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:3.8W; Transistor Case Style:TO-252; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:-40A; Package / Case:DPAK; Power Dissipation Pd:3.8W; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:-1.8V; Voltage Vgs Rds on Measurement:10V
This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V).
Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) A = -40 / Drain-Source Voltage (Vds) V = -30 / ON Resistance (Rds(on)) mOhm = 20 / Gate-Source Voltage V = 25 / Fall Time ns = 21 / Rise Time ns = 11 / Turn-OFF Delay Time ns = 43 / Turn-ON Delay Time ns = 17 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) W = 52
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: +9.94%
Modelli CAD
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Specifiche tecniche
Physical
Case/PackageTO-252
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight260.37 mg
Technical
Continuous Drain Current (ID)11 A
Current Rating-40 A
Drain to Source Breakdown Voltage-30 V
Drain to Source Resistance20 mΩ
Drain to Source Voltage (Vdss)-30 V
Dual Supply Voltage30 V
Element ConfigurationSingle
Fall Time21 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance1.715 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation52 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs1.8 V
Number of Channels1
Number of Elements1
Power Dissipation52 W
Rds On Max20 mΩ
Resistance20 MΩ
Rise Time11 ns
Schedule B8541290080
TerminationSMD/SMT
Threshold Voltage-1.8 V
Turn-Off Delay Time43 ns
Turn-On Delay Time17 ns
Voltage Rating (DC)-30 V
Dimensions
Height2.517 mm
Length6.73 mm
Width6.22 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi FDD6685.
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità