onsemi FDC2612
$ 0.342
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Cronologia dell'inventario
Tendenza a 3 mesi: -51.59%
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Schede tecniche e documenti
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Supply Chain
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2001-07-16
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Parti correlate
STMicroelectronicsSTT6N3LLH6
N-channel 30 V, 0.021 Ohm, 6 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in SOT23-6L package
InfineonIRLMS1503TRPBF
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 0.1Ohm;ID 3.2A;Micro6 (SOT-23);PD 1.7W;-55de
InfineonIRLMS5703TRPBF
-30V Single P-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package, TSOP6L, RoHS
Descrizioni
Descrizioni di onsemi FDC2612 fornite dai suoi distributori.
TRANSISTOR,MOSFET,N-CHANNEL,200V V(BR)DSS,1.1A I(D),TSOP
Trans MOSFET N-CH 200V 1.1A 6-Pin TSOT-23 T/R / MOSFET N-CH 200V 1.1A SSOT-6
N-Channel PowerTrench® MOSFET 200V 1.1A, 725mΩ
MOSFET, N CH, 200V, 1.1A, SOT-23-6; Transistor Polarity: N Channel; Continuous Drain Current Id: 1.1A; Drain Source Voltage Vds: 200V; On Resistance Rds(on): 0.605ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 1.6W; Transistor Case Style: SOT-23; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
Chip Resistor - Surface Mount 470mOhm 0603 (1608 Metric) ±5% ±300ppm/°C Thick Film Tape & Reel (TR) 2 1 (Unlimited) ERJ Res Thick Film 0603 0.47 Ohm 5% 1/10W ±300ppm/°C Molded SMD Punched Carrier T/R
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: -51.59%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
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Specifiche tecniche
Physical
Case/PackageSOT-23-6
Contact PlatingTin
MountSurface Mount
Number of Pins6
Number of Terminals6
Weight36 mg
Technical
Continuous Drain Current (ID)1.1 A
Current Rating1.1 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance725 mΩ
Drain to Source Voltage (Vds)200 V
Element ConfigurationSingle
Fall Time6 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance234 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation800 mW
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation800 mW
Rds On Max725 mΩ
Resistance725 MΩ
Rise Time6 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time17 ns
Turn-On Delay Time6 ns
Voltage Rating (DC)200 V
Dimensions
Height1.1 mm
Length3 mm
Width1.7 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi FDC2612.
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
REACH SVHCUnaffected
RoHSCompliant
Dichiarazioni di conformità