onsemi FDC8601
$ 0.678
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Cronologia dell'inventario
Tendenza a 3 mesi: -2.37%
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|---|---|---|---|
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Supply Chain
Country of OriginMalaysia
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2010-06-28
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
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Diodes Inc.ZXMN10B08E6TA
ZXMN10B Series 100 V 0.23 Ohm N-Channel Enhancement Mode MOSFET - SOT-23-6
Descrizioni
Descrizioni di onsemi FDC8601 fornite dai suoi distributori.
N-Channel Shielded Gate Power Trench® MOSFET, 100 V, 2.7 A, 109 mΩ
MOSFET, N CHANNEL, 100V, 0.086OHM, 2.7A, SUPERSOT-6
Trans MOSFET N-CH 100V 2.7A 6-Pin SuperSOT T/R
Fet 100V 109.0 Mohm Ssot6 Rohs Compliant: Yes
Small Signal Field-Effect Transistor, 2.7A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193AA
MOSFET N-CH 100V 2.7A SUPERSOT6
MOSFET N-CH 100V TRENCH SSOT-6
SMALL SIGNAL FIELD-EFFECT TRANSI
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: -2.37%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
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Specifiche tecniche
Physical
Case/PackageSOT-23-6
MountSurface Mount
Number of Pins6
Number of Terminals6
Weight36 mg
Technical
Continuous Drain Current (ID)2.7 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance183 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time2 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance210 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1.6 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Nominal Vgs3 V
Number of Channels1
Number of Elements1
Power Dissipation1.6 W
Rds On Max109 mΩ
Rise Time1.3 ns
Schedule B8541290080
Threshold Voltage3 V
Turn-Off Delay Time7.6 ns
Turn-On Delay Time4.5 ns
Dimensions
Height1.1 mm
Length3 mm
Width1.7 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità