onsemi FDC2512
EOL
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Cronologia dell'inventario
Tendenza a 3 mesi: -3.65%
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Schede tecniche e documenti
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Supply Chain
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2001-06-18
Lifecycle StatusEOL (Last Updated: 2 days ago)
LTB Date2022-01-31
LTD Date2023-01-31
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 2 days ago)
Parti correlate
STMicroelectronicsSTT6N3LLH6
N-channel 30 V, 0.021 Ohm, 6 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in SOT23-6L package
Diodes Inc.ZXMN10A08E6TA
MOSFET N-CH 100V 1.5A SOT-23-6 / Trans MOSFET N-CH 100V 3.5A 6-Pin SOT-26 T/R
Descrizioni
Descrizioni di onsemi FDC2512 fornite dai suoi distributori.
Transistor MOSFET N Channel 150 Volt 1.4 Amp 6-Pin Supersot Tape And Reel
N-Channel PowerTrench® MOSFET 150V 1.4A, 425mΩ
N-Channel 150 V 425 mOhm Surface Mount PowerTrench Mosfet - SSOT-6
ON SEMICONDUCTOR - FDC2512 - Power MOSFET, N Channel, 150 V, 1.4 A, 0.319 ohm, SuperSOT, Surface Mount
MOSFET, N, SMD, SSOT-6; Transistor Polarity:N Channel; Continuous Drain Current Id:1.4A; Drain Source Voltage Vds:150V; On Resistance Rds(on):425mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.6V; Power Dissipation Pd:1.6W; Transistor Case Style:SuperSOT; No. of Pins:6; SVHC:No SVHC (19-Dec-2011); Current Id Max:1.4A; Package / Case:SuperSOT-6; Power Dissipation Pd:1.6W; Termination Type:SMD; Voltage Vds Typ:150V; Voltage Vgs Max:2.6V; Voltage Vgs Rds on Measurement:10V
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: -3.65%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
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Specifiche tecniche
Physical
Case/PackageSOT-23-6
Contact PlatingTin
MountSurface Mount
Number of Pins6
Number of Terminals6
Technical
Continuous Drain Current (ID)1.4 A
Current14 A
Current Rating1.4 A
Drain to Source Breakdown Voltage150 V
Drain to Source Resistance425 mΩ
Drain to Source Voltage (Vdss)150 V
Dual Supply Voltage150 V
Element ConfigurationSingle
Fall Time4 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance344 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation800 mW
Min Breakdown Voltage150 V
Min Operating Temperature-55 °C
Nominal Vgs2.6 V
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation800 mW
Rds On Max425 mΩ
Resistance425 MΩ
Rise Time3.5 ns
Schedule B8541290080
TerminationSMD/SMT
Threshold Voltage2.6 V
Turn-Off Delay Time22 ns
Turn-On Delay Time6.5 ns
Voltage150 V
Voltage Rating (DC)150 V
Dimensions
Height1.1 mm
Length3 mm
Width1.7 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi FDC2512.
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità