N-CHANNEL LOGIC LEVEL POWERTRENCH MOSFET Power Field-Effect Transistor, 60A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

ComSIT Distribution GmbH

Chip Resistor - Surface Mount 680Ohm 0402 (1005 Metric) ±1% ±100ppm/°C Thick Film Tape & Reel (TR) 2 1 (Unlimited) ERJ RES SMD 680 OHM 1% 1/10W 0402

Utmel Electronic

MOSFET, N-CH, 30V, 60A, TO-263AB-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 60A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0068ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.9V;

Farnell

This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.

Fairchild Semiconductor

Immagini

Rochester Electronics

Alias del produttore

onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:

ON Semiconductor
ONS
ONSEMICON
ON SEM
ON SEMICONDUCTO
ON SEMICONDUCTORS
ONSEMIC
ON Semicondu
OSC
ONSE
ON SEMICOND
ON Semiconductor / Fairchild
SCG
ON Semiconductor Cor
ON SEMICO
ONSM
ON SEMICONDUCTOR CORP
onsemi / Fairchild
MOT/ON SEMI
Fairchild/ONSemiconductor
ON Semiconductor Corporation
ON4
ON Semi - ON Semiconductor
ON SEMICONDUCT
ON-SEMI SCG
ON Semiconductor Inc.
onsemiconductor
On Semiconductor Ltd

Alias del numero di parte

Questa parte può essere conosciuta con i seguenti numeri di parte alternativi:

FDB7030BL.

Cronologia dell'inventario

Tendenza a 3 mesi: -42.86%

Modelli CAD

Scarica il simbolo, l'impronta e il 3D STEP

Parti alternative

0 parti disponibili

Specifiche tecniche

Physical

Case/PackageTO-263-3

Contact PlatingTin

MountSurface Mount

Number of Pins3

Number of Terminals2

Weight1.31247 g

Technical

Continuous Drain Current (ID)60 A

Current Rating60 A

Drain to Source Breakdown Voltage30 V

Drain to Source Resistance9 mΩ

Drain to Source Voltage (Vdss)30 V

Element ConfigurationSingle

Fall Time19 ns

Gate to Source Voltage (Vgs)20 V

Input Capacitance1.76 nF

Max Operating Temperature175 °C

Max Power Dissipation65 W

Min Breakdown Voltage30 V

Min Operating Temperature-55 °C

Number of Elements1

PackagingTape & Reel (TR)

Power Dissipation60 W

Rds On Max9 mΩ

Resistance9 MΩ

Rise Time12 ns

Schedule B8541290080

Threshold Voltage1.9 V

Turn-Off Delay Time30 ns

Turn-On Delay Time12 ns

Voltage Rating (DC)30 V

Dimensions

Height4.83 mm

Length10.67 mm

Width9.65 mm

Schede tecniche e documenti

Scarica le schede tecniche e la documentazione del produttore per onsemi FDB7030BL.

IHS

Datasheet5 pagine22 anni fa

Farnell

element14 APAC

onsemi

Fairchild Semiconductor

Conformità

Classificazione ambientale

Lead FreeLead Free

REACH SVHCNo

RoHSCompliant

Dichiarazioni di conformità

Rohs Statement3 pagine5 anni fa

Reach Statement3 pagine12 anni fa

Materials Sheet3 pagine12 anni fa

Materials Sheet3 pagine11 anni fa

Reach Statement3 pagine11 anni fa

Reach Statement8 pagine11 anni fa

Rohs Statement1 pagina13 anni fa

Rohs Statement1 pagina14 anni fa

Reach Statement2 pagine13 anni fa

Rohs StatementN/AN/A