onsemi FDB6030L
Obsolete
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Prezzi all'ingrosso
Cronologia dell'inventario
Tendenza a 3 mesi: -100%
Modelli CAD
0 modelli disponibili
Parti alternative
0 parti disponibili
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1997-11-01
Lifecycle StatusObsolete (Last Updated: 7 months ago)
Descrizioni
Descrizioni di onsemi FDB6030L fornite dai suoi distributori.
Trans MOSFET N-CH 30V 48A 3-Pin(2+Tab) D2PAK T/R
Power Field-Effect Transistor, 52A I(D), 30V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
52W(Tc) 20V 3V@ 250µA 18nC@ 5 V 1individualNChannel 30V 13mΩ@ 26A,10V 48A 1.25nF@15V TO-263AB SMD mount 10.67mm*9.65mm*4.83mm
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:48A; On Resistance, Rds(on):13mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220 ;RoHS Compliant: Yes
TRANSISTOR, MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Voltage, Vds Typ:30V; Current, Id Cont:48A; On State Resistance:0.013ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1.9V; Case Style:TO-220; Termination Type:SMD; Operating Temperature Range:-65°C to +175°C; Transistor Case Style:TO-220
This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: -100%
Modelli CAD
0 modelli disponibili
Parti alternative
0 parti disponibili
Specifiche tecniche
Physical
Case/PackageTO-263-3
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight1.31247 g
Technical
Continuous Drain Current (ID)48 A
Current Rating52 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance13 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time12 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.25 nF
Max Operating Temperature175 °C
Max Power Dissipation52 W
Min Breakdown Voltage30 V
Min Operating Temperature-65 °C
Number of Elements1
Power Dissipation75 W
Rds On Max13 mΩ
Resistance13 MΩ
Rise Time12 ns
Turn-Off Delay Time29 ns
Conformità
Classificazione ambientale
Lead FreeLead Free
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità