onsemi FDA59N30
$ 2.058
Production
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
Cronologia dell'inventario
Tendenza a 3 mesi: -3.05%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi FDA59N30.
Modelli CAD
Scarica il simbolo onsemi FDA59N30, l'impronta e i modelli STEP 3D dai nostri partner di fiducia.
| FONTE | eCAD | mCAD | FILE |
|---|---|---|---|
 Component Search Engine | SimboloImpronta | 3D | Scarica |
 EE Concierge | SimboloImpronta | ||
 Ultra Librarian | SimboloImpronta | Scarica |
Il sito del partner si aprirà in una nuova scheda quando si scaricano i modelli CAD
Scaricando i modelli CAD da Octopart, accetti i nostri Termini e condizioni e l'Informativa sulla privacy.
Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2005-11-22
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Parti correlate
InfineonIRFP4229PBF
MOSFET Operating temperature: -40...+175 °C Housing type: TO-247 Power dissipation: 150 W
Descrizioni
Descrizioni di onsemi FDA59N30 fornite dai suoi distributori.
N-Channel Power MOSFET, UniFETTM, 300V, 59A, 56mΩ, TO-3P
MOSFET N-CH 300V 59A TO-3P / Trans MOSFET N-CH 300V 59A 3-Pin(3+Tab) TO-3P Tube
N-Channel 300 V 0.056 Ohm Flange Mount UniFET Mosfet TO-3PN
MOSFET, N, TO-3P; Transistor Polarity:N Channel; Continuous Drain Current Id:59A; Drain Source Voltage Vds:300V; On Resistance Rds(on):56mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:500W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-3P; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:59A; Package / Case:TO-3P; Power Dissipation Pd:500W; Power Dissipation Pd:500W; Pulse Current Idm:236A; Termination Type:Through Hole; Voltage Vds Typ:300V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: -3.05%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Specifiche tecniche
Physical
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight6.401 g
Technical
Continuous Drain Current (ID)59 A
Drain to Source Breakdown Voltage300 V
Drain to Source Resistance56 mΩ
Drain to Source Voltage (Vdss)300 V
Element ConfigurationSingle
Fall Time200 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance4.67 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation500 W
Min Breakdown Voltage300 V
Min Operating Temperature-55 °C
Nominal Vgs5 V
Number of Channels1
Number of Elements1
Power Dissipation500 W
Rds On Max56 mΩ
Resistance56 MΩ
Rise Time575 ns
Schedule B8541290080
Threshold Voltage5 V
Turn-Off Delay Time120 ns
Turn-On Delay Time140 ns
Dimensions
Height23.8 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi FDA59N30.
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità