onsemi FCD7N60TM-WS
$ 1.15
Production
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Verical | FCD7N60TM_WS | 46 | 7 | |||||||||
| Arrow Electronics | FCD7N60TM-WS | 46 | 1 | |||||||||
| Rochester Electronics | FCD7N60TM-WS | 2170 | 1h | |||||||||
| DigiKey | FCD7N60TM-WSCT-ND | 1188 | 1 | Cut Tape | ||||||||
| Newark | FCD7N60TM-WS | 0 | 2500 | Tape & Reel |
Cronologia dell'inventario
Tendenza a 3 mesi: -59.74%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Modelli CAD
Scarica il simbolo onsemi FCD7N60TM-WS, l'impronta e i modelli STEP 3D dai nostri partner di fiducia.
| FONTE | eCAD | mCAD | FILE |
|---|---|---|---|
 SnapEDA | Impronta | 3D | Scarica |
 Ultra Librarian | SimboloImpronta | Scarica |
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2008-10-08
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Parti correlate
STMicroelectronicsSTD10N60M2
N-channel 600 V, 0.55 Ohm typ., 7.5 A MDmesh M2 Power MOSFET in DPAK package
STMicroelectronicsSTD8NM60ND
Mosfet Transistor, N Channel, 7 A, 600 V, 0.59 Ohm, 10 V, 4 V Rohs Compliant: Yes
VishaySIHD7N60E-GE3
VISHAY SIHD7N60E-GE3 Power MOSFET, N Channel, 7 A, 650 V, 0.5 ohm, 10 V, 2 V
STMicroelectronicsSTD11NM50N
N-channel 500 V, 0.40 Ohm typ., 8.5 A MDmesh II Power MOSFET in a DPAK package
Descrizioni
Descrizioni di onsemi FCD7N60TM-WS fornite dai suoi distributori.
N-Channel Power MOSFET, SUPERFET®, Easy Drive, 600 V, 7 A, 600 mΩ, DPAK
N-Channel 600 V 0.6 Ohm 30 nC Surface Mount SuperFET Mosfet -TO-252-3
MOSFET N-CH 600V 7A DPAK / N-Channel 600 V 7A (Tc) 83W (Tc) Surface Mount TO-252AA
Power Field-Effect Transistor, 7A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Aluminum Electrolytic Capacitors 100μF Radial, Can - SMD ±20% Tape & Reel (TR) FP 0.303 7.70mm Surface Mount Automotive CAP ALUM 100UF 20% 35V SMD
SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: -59.74%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Specifiche tecniche
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight260.37 mg
Technical
Continuous Drain Current (ID)7 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance600 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time32 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance920 pF
Max Operating Temperature150 °C
Max Power Dissipation83 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation83 W
Rds On Max600 mΩ
Resistance600 MΩ
Rise Time55 ns
Schedule B8541290080
Turn-Off Delay Time75 ns
Turn-On Delay Time35 ns
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità