onsemi FCD5N60-F085
$ 0.943
Obsolete
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Cronologia dell'inventario
Tendenza a 3 mesi: -10.87%
Modelli CAD
0 modelli disponibili
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0 parti disponibili
Supply Chain
Lifecycle StatusObsolete (Last Updated: 6 days ago)
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 6 days ago)
Parti correlate
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N-channel 600 V, 5 A, 0.84 Ohm typ., MDmesh(TM) II Power MOSFET in DPAK package
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InfineonSPD04N60C3BTMA1
MOSFET N-CH 650V 4.5A TO252-3 N-Channel 650 V 4.5A (Tc) 50W (Tc) Surface Mount PG-TO252-3-11
InfineonIPD60R950C6ATMA1
MOSFET N-CH 600V 4.4A TO252-3 N-Channel 600 V 4.4A (Tc) 37W (Tc) Surface Mount PG-TO252-3
InfineonIPD60R1K0CEATMA1
MOSFET N-CH 600V 4.3A TO252-3 N-Channel 600 V 4.3A (Tc) 37W (Tc) Surface Mount PG-TO252-3
STMicroelectronicsSTD9HN65M2
N-channel 650 V, 0.71 Ohm typ., 5.5 A MDmesh M2 Power MOSFET in DPAK package
Descrizioni
Descrizioni di onsemi FCD5N60-F085 fornite dai suoi distributori.
Power Field-Effect Transistor, 4.6A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
N-Channel Power MOSFET, SuperFET® 600 V, 4.6 A, 0.86 Ω
54W(Tj) 30V 5V@ 250µA 21nC@ 10 V 1individualNChannel 600V 1.1Ω@ 4.6A,10V 4.6A 570pF@25V TO-252AA SMD mount 6.73mm*6.22mm*2.39mm
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: -10.87%
Modelli CAD
0 modelli disponibili
Parti alternative
0 parti disponibili
Specifiche tecniche
Physical
Case/PackageTO-252-3
MountSurface Mount
Number of Terminals2
Weight260.37 mg
Technical
Continuous Drain Current (ID)4.6 A
Drain to Source Resistance3.2 Ω
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Input Capacitance570 pF
Max Operating Temperature150 °C
Max Power Dissipation54 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Elements1
Rds On Max1.1 Ω
Schedule B8541290080