STMicroelectronics STD7ANM60N
$ 0.752
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Cronologia dell'inventario
Tendenza a 3 mesi: -55.39%
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2012-06-25
Lifecycle StatusEOL (Last Updated: 1 week ago)
LTB Date2026-11-06
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N-channel 650 V, 0.71 Ohm typ., 5.5 A MDmesh M2 Power MOSFET in DPAK package
Descrizioni
Descrizioni di STMicroelectronics STD7ANM60N fornite dai suoi distributori.
N-channel 600 V, 5 A, 0.84 Ohm typ., MDmesh(TM) II Power MOSFET in DPAK package
STD7ANM60N N-CHANNEL MOSFET TRANSISTOR, 5 A, 600 V, 3-PIN D2PAK
Trans MOSFET N-CH 600V 5A Automotive 3-Pin(2+Tab) D2PAK T/R
Power Field-Effect Transistor, 5A I(D), 600V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
MOSFET, AEC-Q101, N-CH, 600V, 5A, 45W; Transistor Polarity: N Channel; Continuous Drain Current Id: 5A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.8ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 45W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: MDmesh II Series; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
Alias del produttore
STMicroelectronics ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. STMicroelectronics può anche essere conosciuto con i seguenti nomi:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Cronologia dell'inventario
Tendenza a 3 mesi: -55.39%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
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Specifiche tecniche
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)5 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance900 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time12 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance363 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation45 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingTape and Reel
Power Dissipation45 W
Rds On Max900 mΩ
Rise Time10 ns
Schedule B8541290080
Turn-Off Delay Time26 ns
Turn-On Delay Time7 ns
Dimensions
Height2.63 mm
Length10.4 mm
Width9.35 mm
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
RatingsAEC-Q101
REACH SVHCNo
RoHSCompliant