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Infineon IPD60R950C6ATMA1

Power MOSFET, N Channel, 650 V, 5.7 A, 0.68 ohm, TO-252 (DPAK), Surface Mount
$ 0.47
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Infineon SCT

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Country of OriginGermany, Mainland China, Malaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-08-31
Lifecycle StatusProduction (Last Updated: 2 weeks ago)
LTB Date2015-09-15
LTD Date2015-12-15

Parti correlate

STMicroelectronicsSTD7ANM60N
N-channel 600 V, 5 A, 0.84 Ohm typ., MDmesh(TM) II Power MOSFET in DPAK package
Trans MOSFET N-CH 500(Min)V 5A 3-Pin TO-252 T/R
Tape & Reel (TR) Surface Mount N-Channel Single Mosfet Transistor 5.7A Tc 5.7A 74W Tc 600V
STMicroelectronicsSTD9N65M2
N-channel 650 V, 0.79 Ohm typ., 5 A MDmesh M2 Power MOSFET in DPAK package
N-Channel 600 V 4.3 A 1000 mO 13 nC CoolMOS CE Power Transistor - DPAK
STMicroelectronicsSTD9HN65M2
N-channel 650 V, 0.71 Ohm typ., 5.5 A MDmesh M2 Power MOSFET in DPAK package

Descrizioni

Descrizioni di Infineon IPD60R950C6ATMA1 fornite dai suoi distributori.

Power MOSFET, N Channel, 650 V, 5.7 A, 0.68 ohm, TO-252 (DPAK), Surface Mount
Trans MOSFET N-CH 600V 4.4A 3-Pin(2+Tab) DPAK T/R / Metal Oxide Semiconductor Field Effect Transistor | MOSFET N-CH 600V 4.4A TO252
CoolMOS™ C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation, PG-TO252-3, RoHS
Infineon SCT
Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:5.7A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; Power Dissipation:48W; No. of Pins:3Pins RoHS Compliant: Yes
MOSFET,N CH,600V,8.1A,TO252; Transistor Polarity:N Channel; Continuous Drain Current Id:4.4A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.86ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:37W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-252; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:4.4A; Power Dissipation Pd:37W; Voltage Vgs Max:30V
CoolMOS C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The C6 devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Extremely low losses due to very low Figure of Merit (R DS(on)* Q g and E oss); Very high commutation ruggedness; Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting

Alias del produttore

Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:

  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEON TECH
  • INFINEN
  • IFX
  • INFIENON
  • IR/INFINEON
  • INFINEON/IR
  • IFT
  • INFINEON/SIEMENS
  • LNFINEON
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • NFINEON
  • INFINEON/Infineon
  • INFINEON TECHNOLOGIES (ASIA

Alias del numero di parte

Questa parte può essere conosciuta con i seguenti numeri di parte alternativi:

  • IPD60R950C6
  • IPD60R950C6ATMA1.
  • IPD60R950C6BTMA1
  • SP000629368
  • SP001117730