onsemi BSS84
$ 0.084
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Rivenditori non autorizzati
Cronologia dell'inventario
Tendenza a 3 mesi: -100%
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Price @ 1000
$ 0.084
$ 0.076
$ 0.076
Stock
9,641,989
34,646,465
34,646,465
Authorized Distributors
6
6
6
Mount
Surface Mount
-
-
Case/Package
SOT-23
SOT-23
SOT-23
Drain to Source Voltage (Vdss)
-50 V
-50 V
-50 V
Continuous Drain Current (ID)
130 mA
130 mA
130 mA
Threshold Voltage
-1.7 V
-2 V
-2 V
Rds On Max
10 Ω
10 Ω
10 Ω
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
Power Dissipation
360 mW
225 mW
225 mW
Input Capacitance
73 pF
30 pF
30 pF
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1994-01-01
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Parti correlate
Diodes Inc.2N7002-7-F
2N7002 Series 60 V 7.5 Ohm SMT N-Channel Enhancement Mode Mosfet - SOT-23-3
Descrizioni
Descrizioni di onsemi BSS84 fornite dai suoi distributori.
TRANSISTOR, MOSFET, P-CHANNEL, SMALL SIGNAL SWITCH, 50V, 0.13A, SOT23
Power MOSFET, P Channel, 50 V, 130 mA, 10 ohm, SOT-23, Surface Mount
P-Channel MOSFET, Enhancement Mode, -50V, -0.13A, 10Ω
Transistor MOSFET P-CH 50V 0.1A 3-Pin SOT-23 T/R
P-CHANNEL SINGLE WITH BUILT-IN DIODE 3 EAR99 Mosfet Transistor 0.13A 0.25W 50V 10Ohm
onsemi PChannel EnhancedMOSTube, Vds=50 V, 130 mA, SOT-23encapsulation, surface mount, 3Pin
Small Signal Field-Effect Transistor, 0.13A I(D), 50V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
This P-channel enhancement-mode field-effect transistor is produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process minimizes on-state resistance and to provide rugged and reliable performance and fast switching. The BSS84 can be used, with a minimum of effort, in most applications requiring up to 0.13 A DC and can deliver current up to 0.52 A. This product is particularly suited to low-voltage applications requiring a low-current high-side switch.
Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) mA = -130 / Drain-Source Voltage (Vds) V = -50 / ON Resistance (Rds(on)) Ohm = 10 / Gate-Source Voltage V = 20 / Fall Time ns = 9.6 / Rise Time ns = 13 / Turn-OFF Delay Time ns = 20 / Turn-ON Delay Time ns = 5 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) mW = 360
MOSFET,P CH,50V,0.13A,SOT23; Transistor Polarity:P Channel; Continuous Drain Current Id:130mA; Drain Source Voltage Vds:50V; On Resistance Rds(on):10ohm; Rds(on) Test Voltage Vgs:-5V; Threshold Voltage Vgs Typ:-1.7V; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:130mA; Current Temperature:25°C; External Depth:2.5mm; External Length / Height:1.12mm; External Width:3.05mm; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:SOT-23; Power Dissipation Pd:360mW; Power Dissipation Pd:360µW; Power Dissipation Ptot Max:360mW; Pulse Current Idm:520mA; SMD Marking:SP; Tape Width:8mm; Termination Type:SMD; Voltage Vds Typ:-50V; Voltage Vgs Max:-1.7V; Voltage Vgs Rds on Measurement:-5V; Voltage Vgs th Max:-2V
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: -100%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
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1 parte disponibile
Specifiche tecniche
Physical
Case/PackageSOT-23
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)130 mA
Current13 A
Current Rating-130 mA
Drain to Source Breakdown Voltage-50 V
Drain to Source Resistance10 Ω
Drain to Source Voltage (Vdss)-50 V
Dual Supply Voltage-50 V
Element ConfigurationSingle
Fall Time6.3 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance73 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation250 mW
Min Breakdown Voltage50 V
Min Operating Temperature-55 °C
Nominal Vgs-1.7 V
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation360 mW
Rds On Max10 Ω
Resistance10 Ω
Rise Time6.3 ns
Schedule B8541210080
TerminationSMD/SMT
Threshold Voltage-1.7 V
Turn-Off Delay Time10 ns
Turn-On Delay Time2.5 ns
Voltage50 V
Voltage Rating (DC)-50 V
Dimensions
Height1.2 mm
Length2.92 mm
Width3.05 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità