Infineon SPD02N80C3ATMA1

42KW 20V 3.9V 9NC@ 10V 2N 800V 2.7¦¸@ 10V 2A 290PF@ 25V TO-252 6.5MM*622CM*2.51MM
$ 0.468
Production
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DistributorSKUMinPkg
NewarkSPD02N80C3ATMA111.6071Cut Tape
RutronikTMOSP1123850002500
3h
Rochester ElectronicsSPD02N80C3ATMA1580
19h
Arrow Electronics
4
SPD02N80C3ATMA124951
DigiKey
3
SPD02N80C3ATMA1CT-ND19301Cut Tape

Schede tecniche e documenti

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IHS

Datasheet10 pagine13 anni fa
Datasheet10 pagine0 anni fa

Newark

Farnell

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Supply Chain

Country of OriginGermany, Mainland China, Malaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-08-10
Lifecycle StatusProduction (Last Updated: 4 months ago)

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Descrizioni

Descrizioni di Infineon SPD02N80C3ATMA1 fornite dai suoi distributori.

42KW 20V 3.9V 9nC@ 10V 2N 800V 2.7¦¸@ 10V 2A 290pF@ 25V TO-252 6.5mm*622cm*2.51mm
Unikeyic (ICkey)
Power Field-Effect Transistor, 2A I(D), 800V, 2.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Semicontronic
MOSFET, N, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:2A; Drain Source Voltage Vds:800V; On Resistance Rds(on):2.7ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:42W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-252; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:2A; Package / Case:TO-252; Power Dissipation Pd:42W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:800V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
element14 APAC
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 2 / Drain-Source Voltage (Vds) V = 800 / ON Resistance (Rds(on)) Ohm = 2.7 / Gate-Source Voltage V = 20 / Fall Time ns = 18 / Rise Time ns = 15 / Turn-OFF Delay Time ns = 72 / Turn-ON Delay Time ns = 15 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) W = 42
Distrelec
800V CoolMOS C3 is Infineon's third series of CoolMOS with market entry in 2001. C3 is the "working horse" of the portfolio. | Summary of Features: Low specific on-state resistance; (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Consumer; PC power; Adapter; Lighting; Solar
Infineon

Immagini

RS
Farnell
TME
Distrelec
RS
Future Electronics
DKO Electronshik

Alias del produttore

Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:

  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEON TECH
  • INFINEN
  • IFX
  • INFIENON
  • IR/INFINEON
  • INFINEON/IR
  • IFT
  • INFINEON/SIEMENS
  • LNFINEON
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • NFINEON
  • INFINEON/Infineon
  • INFINEON TECHNOLOGIES (ASIA

Alias del numero di parte

Questa parte può essere conosciuta con i seguenti numeri di parte alternativi:

  • SP001117754
  • SPD02N80C3
  • SPD02N80C3ATMA1.