onsemi FCD2250N80Z
$ 0.874
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Cronologia dell'inventario
Tendenza a 3 mesi: -68.78%
Modelli CAD
0 models available
Parti alternative
0 parti disponibili
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi FCD2250N80Z.
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2014-12-19
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Parti correlate
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MOSFET N-CH 800V 1.9A TO252-3 / N-Channel 800 V 1.9A (Tc) 42W (Tc) Surface Mount PG-TO252-3
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MOSFET N-CH 650V 3.2A TO252-3 N-Channel 650 V 3.2A (Tc) 28W (Tc) Surface Mount PG-TO252-3
InfineonSPD02N80C3ATMA1
MOSFET N-CH 800V 2A TO252-3 N-Channel 800 V 2A (Tc) 42W (Tc) Surface Mount PG-TO252-3
Descrizioni
Descrizioni di onsemi FCD2250N80Z fornite dai suoi distributori.
N-Channel Power MOSFET, SUPERFET® II, 800 V, 2.6 A, 2.25 Ω, DPAK
Trans MOSFET N-CH 800V 2.6A 3-Pin(2+Tab) DPAK T/R
TAPE REEL / SuperFET2 800V 2250mOhm Zener
场效应管, MOSFET, N沟道, 800V, 2.6A, 150度 C, 39W;
MOSFET, N-CH, 800V, 2.6A, 150DEG C, 39W;
39W(Tc) 20V 4.5V@ 260µA 14nC@ 10 V 1individualNChannel 800V 2.25Ω@ 1.3A,10V 2.6A 585pF@100V TO-252AA SMD mount 6.73mm*6.22mm*2.39mm
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as Audio, Laptop adapter, Lighting, ATX power and industrial power applications.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: -68.78%
Modelli CAD
0 models available
Parti alternative
0 parti disponibili
Specifiche tecniche
Physical
Case/PackageTO-252-3
MountSurface Mount
Number of Terminals2
Weight260.37 mg
Technical
Continuous Drain Current (ID)2.6 A
Drain to Source Breakdown Voltage800 V
Drain to Source Resistance2.25 Ω
Drain to Source Voltage (Vdss)800 V
Element ConfigurationSingle
Fall Time8.7 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance585 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation39 W
Min Breakdown Voltage800 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingTape & Reel (TR)
Power Dissipation39 W
Rds On Max2.25 Ω
Resistance2.25 Ω
Rise Time6.7 ns
Schedule B8541290080
Turn-Off Delay Time26 ns
Turn-On Delay Time11 ns
Dimensions
Height2.517 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi FCD2250N80Z.
Conformità
Classificazione ambientale
China RoHSNon-Compliant
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità