Infineon IRLS3034-7PPBF
$ 11.72
Obsolete
Prezzo e stock
Distributori autorizzati
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Rivenditori non autorizzati
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Questo componente
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Price @ 1000
$ 11.72
$ 1.575
Stock
105,533
1,769,292
Authorized Distributors
2
4
Mount
Surface Mount
Surface Mount
Case/Package
D2PAK
TO-263-7
Drain to Source Voltage (Vdss)
40 V
40 V
Continuous Drain Current (ID)
240 A
240 A
Threshold Voltage
2.5 V
-
Rds On Max
1.4 mΩ
1.4 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
380 W
380 W
Input Capacitance
10.99 nF
10.99 nF
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-01-12
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2018-12-15
LTD Date2019-06-15
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STH270N4F3-6 N-channel MOSFET Transistor, 180 A, 40 V, 8-Pin H2PAK
Descrizioni
Descrizioni di Infineon IRLS3034-7PPBF fornite dai suoi distributori.
Single N-Channel 40 V 1.4 mOhm 120 nC HEXFET® Power Mosfet - D2PAK-7
40V Single N-Channel HEXFET Power MOSFET in a 7-Pin D2-Pak package, D2PAK7P, RoHS
Infineon SCT
Trans MOSFET N-CH 40V 380A 7-Pin(6+Tab) D2PAK Tube
MOSFET, N-CH 40V 240A D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:200A; Drain Source Voltage Vds:40V; On Resistance Rds(on):1.4mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:2.5V; Power Dissipation Pd:380W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D2-PAK; No. of Pins:7; SVHC:No SVHC (20-Jun-2011); Current Id Max:380A; Package / Case:D2-PAK-7; Power Dissipation Pd:380W; Power Dissipation Pd:380W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:40V; Voltage Vgs Max:2.5V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.5V
Benefits: RoHS Compliant; Low RDS(ON) at 4.5V VGS; Superior R*Q at 4.5V VGS; Logic Level; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability | Target Applications: Battery Operated Drive
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Specifiche tecniche
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins7
Number of Terminals6
Technical
Continuous Drain Current (ID)240 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance1.4 mΩ
Drain to Source Voltage (Vdss)40 V
Element ConfigurationSingle
Fall Time200 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance10.99 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation380 W
Min Breakdown Voltage40 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance1.4 mΩ
Package Quantity3000
Power Dissipation380 W
Rds On Max1.4 mΩ
Resistance1.4 MΩ
Rise Time590 ns
Schedule B8541290080
Threshold Voltage2.5 V
Turn-Off Delay Time94 ns
Turn-On Delay Time71 ns
Dimensions
Height5.084 mm
Length10.668 mm
Width9.65 mm
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità