Infineon IRLR8726TRPBF

Single N-Channel 30 V 5.8 mOhm 23 nC HEXFET® Power Mosfet - TO-252-3
$ 0.236
Production
Pagina del produttoreScheda dati

Prezzo e stock

Vedi tutte le interruzioni di prezzo
DistributorSKUMinPkg
Avnet
2
IRLR8726TRPBF44.0002K
3d
Newark
2
IRLR8726TRPBF70491Cut Tape
Future Electronics
2
IRLR8726TRPBF24.0002KTape & Reel
Arrow Electronics
3
IRLR8726TRPBF121
RutronikTMOSP1267140002K
1d

Schede tecniche e documenti

Scarica le schede tecniche e la documentazione del produttore per Infineon IRLR8726TRPBF.

IHS

Datasheet12 pagine16 anni fa
Datasheet11 pagine16 anni fa

Newark

iiiC

Cronologia dell'inventario

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Parti alternative

Questo componente
Parti alternative
InfineonIRLR8726TRPBF
InfineonIRLR8726TRLPBF
InfineonIRLR8726TRLPBF
Price @ 1000
$ 0.236
$ 0.231
$ 0.231
Stock
1,682,329
453,003
453,003
Authorized Distributors
6
3
3
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
DPAK
DPAK
DPAK
Drain to Source Voltage (Vdss)
30 V
30 V
30 V
Continuous Drain Current (ID)
50 A
86 A
86 A
Threshold Voltage
-
-
-
Rds On Max
5.8 mΩ
5.8 mΩ
5.8 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
Power Dissipation
75 W
75 W
75 W
Input Capacitance
2.15 nF
2.15 nF
2.15 nF

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-12-16
Lifecycle StatusProduction (Last Updated: 4 months ago)

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Descrizioni

Descrizioni di Infineon IRLR8726TRPBF fornite dai suoi distributori.

Single N-Channel 30 V 5.8 mOhm 23 nC HEXFET® Power Mosfet - TO-252-3
Future Electronics
30V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Infineon SCT
Power MOSFET, N Channel, 30 V, 86 A, 0.004 ohm, TO-252AA, Surface Mount
Avnet
N CH POWER MOSFET, HEXFET, 30A, 86A, DPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:86A; Drain Source Voltage Vds:30V; On Resistance Rds(on):4mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V ;RoHS Compliant: Yes
Newark
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Infineon
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 86 / Drain-Source Voltage (Vds) V = 30 / ON Resistance (Rds(on)) mOhm = 5.8 / Gate-Source Voltage V = 20 / Fall Time ns = 16 / Rise Time ns = 49 / Turn-OFF Delay Time ns = 15 / Turn-ON Delay Time ns = 12 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 75
Distrelec

Immagini

Infineon
Augswan
Newark
RS
TME
Conrad
iiiC
Micros
Future Electronics
LZChips
Rochester Electronics

Alias del produttore

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  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEON TECH
  • INFINEN
  • IFX
  • INFIENON
  • IR/INFINEON
  • INFINEON/IR
  • IFT
  • INFINEON/SIEMENS
  • LNFINEON
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • NFINEON
  • INFINEON/Infineon
  • INFINEON TECHNOLOGIES (ASIA

Alias del numero di parte

Questa parte può essere conosciuta con i seguenti numeri di parte alternativi:

  • IRFIRLR8726TRPBF
  • IRLR8726TRPBF ??
  • IRLR8726TRPBF.
  • SP001573108