Infineon IRLR8726PBF
$ 0.169
Obsolete
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Rivenditori non autorizzati
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Tendenza a 3 mesi: +0.00%
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Price @ 1000
$ 0.169
$ 0.202
$ 0.202
Stock
137,063
1,652,638
1,652,638
Authorized Distributors
3
6
6
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
DPAK
DPAK
DPAK
Drain to Source Voltage (Vdss)
30 V
30 V
30 V
Continuous Drain Current (ID)
50 A
50 A
50 A
Threshold Voltage
1.8 V
-
-
Rds On Max
5.8 mΩ
5.8 mΩ
5.8 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
Power Dissipation
75 W
75 W
75 W
Input Capacitance
2.15 nF
2.15 nF
2.15 nF
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-12-16
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2018-12-15
LTD Date2019-06-15
Parti correlate
InfineonIRLR8726TRLPBF
N CH POWER MOSFET, HEXFET, 30V, 86A, DPAK; Transistor Polarity:N Channel; Contin
InfineonIRFR3709ZPBF
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 5.2Milliohms;ID 86A;D-Pak (TO-252AA);PD 79W
onsemiNTD80N02T4
Tape & Reel (TR) Surface Mount N-Channel Single Mosfet Transistor 80A Tc 80A 75W 40ns
InfineonIRFR3707PBF
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 9.7 Milliohms;ID 61A;D-Pak (TO-252AA);PD 87W
Descrizioni
Descrizioni di Infineon IRLR8726PBF fornite dai suoi distributori.
Single N-Channel 30 V 5.8 mOhm 15 nC HEXFET® Power Mosfet - TO-252AA
30V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 50A I(D), 30V, 0.0058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Benefits: Very Low RDS(on) at 4.5V VGS; Ultra-Low Gate Impedance; Fully Characterized Avalanche Voltage and Current; Lead-Free; RoHS compliant
MOSFET, N-CH 30V 86A DPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:25A; Drain Source Voltage Vds:30V; On Resistance Rds(on):5.8mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:75W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:86A; Package / Case:D-PAK; Power Dissipation Pd:75W; Power Dissipation Pd:75W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.35V
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
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1 parte disponibile
Specifiche tecniche
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)50 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance5.8 mΩ
Drain to Source Voltage (Vdss)30 V
Dual Supply Voltage30 V
Element ConfigurationSingle
Fall Time16 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.15 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation75 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs1.8 V
Number of Channels1
Number of Elements1
On-State Resistance5.8 mΩ
Package Quantity3000
Power Dissipation75 W
Rds On Max5.8 mΩ
Recovery Time36 ns
Resistance5.8 MΩ
Rise Time49 ns
Schedule B8541290080
TerminationSMD/SMT
Threshold Voltage1.8 V
Turn-Off Delay Time15 ns
Turn-On Delay Time12 ns
Dimensions
Height2.52 mm
Length6.7056 mm
Width6.22 mm
Conformità
Classificazione ambientale
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità