Infineon IRLR3915TRPBF

MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 12 Milliohms; ID 61A; D-Pak (TO-252AA); PD 120W
$ 0.601
Production
Pagina del produttoreScheda dati

Prezzo e stock

Vedi tutte le interruzioni di prezzo
DistributorSKUMinPkg
NewarkIRLR3915TRPBF34801Cut Tape
Arrow Electronics
2
IRLR3915TRPBF45391
Future Electronics
3
IRLR3915TRPBF20002KTape & Reel
DigiKey
2
IRLR3915TRPBFCT-ND18081Cut Tape
RS (Formerly Allied Electronics)IRLR3915TRPBF02KBulk
8h

Schede tecniche e documenti

Scarica le schede tecniche e la documentazione del produttore per Infineon IRLR3915TRPBF.

Newark

Datasheet12 pagine15 anni fa
Datasheet12 pagine21 anni fa

IHS

iiiC

RS (Formerly Allied Electronics)

Cronologia dell'inventario

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Supply Chain

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-03-09
Lifecycle StatusProduction (Last Updated: 4 months ago)

Parti correlate

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MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 12 Milliohms;ID 61A;D-Pak (TO-252AA);PD 120W
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Trans MOSFET P-CH 40V 14A Automotive 3-Pin(2+Tab) DPAK T/R / MOSFET P-CH 40V 14A TO252 DPAK
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Descrizioni

Descrizioni di Infineon IRLR3915TRPBF fornite dai suoi distributori.

MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 12 Milliohms;ID 61A;D-Pak (TO-252AA);PD 120W
RS (Formerly Allied Electronics)
T&R / MOSFET, 55V, 61A, 14 mOhm, 61 nC Qg, Logic Level, D-Pak
Newark
Single N-Channel 55 V 17 mOhm 92 nC HEXFET® Power Mosfet - TO-252AA
Future Electronics
55V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Infineon SCT
MOSFET, N-CH, 55V, 30A, TO-252AA-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 30A; Drain Source Voltage Vds: 55V; On Resistance Rds(on): 0.012ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 120W; Transistor Case Style: TO-252AA; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
Farnell
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
Infineon
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 30 / Drain-Source Voltage (Vds) V = 55 / ON Resistance (Rds(on)) mOhm = 14 / Gate-Source Voltage V = 16 / Fall Time ns = 100 / Rise Time ns = 51 / Turn-OFF Delay Time ns = 83 / Turn-ON Delay Time ns = 7.4 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 120
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Immagini

Infineon
Farnell
Newark
DKO Electronshik
TME
iiiC
Future Electronics
LZChips
Newark

Alias del produttore

Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:

  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEON TECH
  • INFINEN
  • IFX
  • INFIENON
  • IR/INFINEON
  • INFINEON/IR
  • IFT
  • INFINEON/SIEMENS
  • LNFINEON
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • NFINEON
  • INFINEON/Infineon
  • INFINEON TECHNOLOGIES (ASIA

Alias del numero di parte

Questa parte può essere conosciuta con i seguenti numeri di parte alternativi:

  • IRFIRLR3915TRPBF
  • IRLR3915TR-PBF
  • SP001558938