Infineon IRLR3915PBF
$ 1.6
Obsolete
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-03-09
Lifecycle StatusObsolete (Last Updated: 4 months ago)
Parti correlate
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Descrizioni
Descrizioni di Infineon IRLR3915PBF fornite dai suoi distributori.
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 12 Milliohms;ID 61A;D-Pak (TO-252AA);PD 120W
55V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 30A I(D), 55V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Benefits: RoHS Compliant; Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; Logic Level
MOSFET, N, 55V, 61A, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:61A; Drain Source Voltage Vds:55V; On Resistance Rds(on):14mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:120W; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D-PAK; Current Id Max:30A; Junction to Case Thermal Resistance A:1.3°C/W; On State resistance @ Vgs = 10V:14mohm; Package / Case:DPAK; Power Dissipation Pd:120W; Power Dissipation Pd:120W; Pulse Current Idm:240A; Termination Type:SMD; Voltage Vds Typ:55V; Voltage Vgs Max:3V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:3V
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Specifiche tecniche
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)30 A
Current Rating61 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance14 mΩ
Drain to Source Voltage (Vdss)55 V
Dual Supply Voltage55 V
Element ConfigurationSingle
Fall Time100 ns
Gate to Source Voltage (Vgs)16 V
Input Capacitance1.87 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation120 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Nominal Vgs3 V
Number of Elements1
On-State Resistance14 mΩ
Package Quantity3000
Power Dissipation120 W
Rds On Max14 mΩ
Resistance14 mΩ
Rise Time51 ns
Threshold Voltage3 V
Turn-Off Delay Time83 ns
Turn-On Delay Time7.4 ns
Voltage Rating (DC)55 V
Dimensions
Height2.39 mm
Length6.73 mm
Width6.22 mm
Conformità
Classificazione ambientale
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità