Infineon IRLR2905ZTRLPBF
$ 0.391
Obsolete
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Rochester Electronics | IRLR2905ZTRLPBF | 508.800 | 3h | |||||||||
| RS (Formerly Allied Electronics) | IRLR2905ZTRLPBF | 0 | 3K | Bulk | 20h | |||||||
| Verical | IRLR2905ZTRLPBF | 333.800 | 709 | |||||||||
| Win Source | WS-IRLR2905ZTRLPBF | 10.640 | 195 | 4h | ||||||||
| Worldway Electronics | IRLR2905ZTRLPBF | 10.719 | 7 | Tape & Reel | 3h |
Cronologia dell'inventario
Tendenza a 3 mesi: -0.20%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2004-03-02
Lifecycle StatusObsolete (Last Updated: 4 months ago)
Parti correlate
InfineonIRLR3915TRPBF
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 12 Milliohms;ID 61A;D-Pak (TO-252AA);PD 120W
onsemiNTDV5805NT4G
Tape & Reel (TR) Surface Mount N-Channel MOSFET (Metal Oxide) Mosfet Transistor 51A Tc 51A 47W 40V
Descrizioni
Descrizioni di Infineon IRLR2905ZTRLPBF fornite dai suoi distributori.
55V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Infineon SCT
HEXFET Power MOSFET Power Field-Effect Transistor, 42A I(D), 55V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature; Logic Level | Target Applications: AC-DC
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:60A; On Resistance, Rds(on):13.5mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:DPAK ;RoHS Compliant: Yes
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Cronologia dell'inventario
Tendenza a 3 mesi: -0.20%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Specifiche tecniche
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)42 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance13.5 mΩ
Drain to Source Voltage (Vdss)55 V
Element ConfigurationSingle
Fall Time33 ns
Gate to Source Voltage (Vgs)16 V
Input Capacitance1.57 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation110 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance13.5 mΩ
Package Quantity3000
Power Dissipation110 W
Rds On Max13.5 mΩ
Rise Time130 ns
Turn-Off Delay Time24 ns
Turn-On Delay Time14 ns
Dimensions
Height2.38 mm
Length6.7056 mm
Width6.22 mm
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità