Infineon IRFR2905ZTRPBF
$ 0.542
EOL
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Newark | IRFR2905ZTRPBF | 480 | 1 | Cut Tape | ||||||||
| Arrow Electronics | IRFR2905ZTRPBF | 2000 | 1 | |||||||||
| Rutronik | TMOSP12282 | 2000 | 2K | 10h | ||||||||
| DigiKey | IRFR2905ZPBFCT-ND | 4596 | 1 | Cut Tape | ||||||||
| RS (Formerly Allied Electronics) | IRFR2905ZTRPBF | 0 | 2K | Bulk | 20h |
Cronologia dell'inventario
Tendenza a 3 mesi: -14.83%
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Questo componente
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Price @ 1000
$ 0.542
$ 1.19
$ 1.19
Stock
799,696
290,402
290,402
Authorized Distributors
6
4
4
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
DPAK
TO-252-3
TO-252-3
Drain to Source Voltage (Vdss)
55 V
55 V
55 V
Continuous Drain Current (ID)
42 A
42 A
42 A
Threshold Voltage
-
-
-
Rds On Max
14.5 mΩ
14.5 mΩ
14.5 mΩ
Gate to Source Voltage (Vgs)
20 V
-
-
Power Dissipation
110 W
110 W
110 W
Input Capacitance
1.38 nF
1.38 nF
1.38 nF
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2003-11-24
Lifecycle StatusEOL (Last Updated: 1 week ago)
LTB Date2026-09-30
LTD Date2027-03-31
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MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 11 Milliohms;ID 42A;D-Pak (TO-252AA);PD 110W
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55V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Diodes Inc.DMP4015SK3Q-13
Trans MOSFET P-CH 40V 14A Automotive 3-Pin(2+Tab) DPAK T/R / MOSFET P-CH 40V 14A TO252 DPAK
Descrizioni
Descrizioni di Infineon IRFR2905ZTRPBF fornite dai suoi distributori.
Single N-Channel 55 V 14.5 mOhm 29 nC HEXFET® Power Mosfet - TO-252AA
55V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Infineon SCT
Power MOSFET, N Channel, 55 V, 42 A, 0.0145 ohm, TO-252AA, Surface Mount
Power Field-Effect Transistor, 42A I(D), 55V, 0.0145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature | Target Applications: AC-DC
MOSFET, N-CH, 55V, 42A, TO-252AA; Transistor Polarity: N Channel; Continuous Drain Current Id: 42A; Drain Source Voltage Vds: 55V; On Resistance Rds(on): 0.0111ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 110W; Transistor Case Style: TO-252AA; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 59 / Drain-Source Voltage (Vds) V = 55 / ON Resistance (Rds(on)) mOhm = 14.5 / Gate-Source Voltage V = 20 / Fall Time ns = 35 / Rise Time ns = 66 / Turn-OFF Delay Time ns = 31 / Turn-ON Delay Time ns = 14 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 110
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Cronologia dell'inventario
Tendenza a 3 mesi: -14.83%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
1 parte disponibile
Specifiche tecniche
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)42 A
Current Rating42 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance14.5 mΩ
Drain to Source Voltage (Vdss)55 V
Element ConfigurationSingle
Fall Time35 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.38 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation110 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance14.5 mΩ
Package Quantity2000
PackagingTape & Reel
Power Dissipation110 W
Rds On Max14.5 mΩ
Resistance14.5 MΩ
Rise Time66 ns
Schedule B8541290080
Turn-Off Delay Time31 ns
Turn-On Delay Time14 ns
Voltage Rating (DC)55 V
Dimensions
Height2.39 mm
Length6.7056 mm
Width6.22 mm
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità