Infineon IRLR2905TRPBF

Mosfet, Power; N-ch; Vdss 55V; Rds(on) 0.027 Ohm; Id 42A; D-pak (TO-252AA); Pd 110W
$ 0.575
Production
Pagina del produttoreScheda dati

Prezzo e stock

Schede tecniche e documenti

Scarica le schede tecniche e la documentazione del produttore per Infineon IRLR2905TRPBF.

IHS

Datasheet11 pagine21 anni fa

Newark

Upverter

DigiKey

RS (Formerly Allied Electronics)

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Parti alternative

Questo componente
Parti alternative
Price @ 1000
$ 0.575
$ 3.46
Stock
1,273,077
97,520
Authorized Distributors
6
2
Mount
Surface Mount
Surface Mount
Case/Package
DPAK
DPAK
Drain to Source Voltage (Vdss)
55 V
55 V
Continuous Drain Current (ID)
20 A
42 A
Threshold Voltage
2 V
1 V
Rds On Max
27 mΩ
27 mΩ
Gate to Source Voltage (Vgs)
16 V
16 V
Power Dissipation
69 W
110 W
Input Capacitance
1.7 nF
1.7 nF

Supply Chain

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-03-04
Lifecycle StatusProduction (Last Updated: 4 months ago)

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MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.027Ohm;ID 42A;D-Pak (TO-252AA);PD 110W
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Descrizioni

Descrizioni di Infineon IRLR2905TRPBF fornite dai suoi distributori.

MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.027Ohm;ID 42A;D-Pak (TO-252AA);PD 110W
Single N-Channel 55 V 110 W 48 nC Hexfet Power Mosfet Surface Mount -TO-252AA
In a Tube of 75, N-Channel MOSFET, 42 A, 55 V, 3-Pin DPAK Infineon IRLR2905PBF
55V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 20A I(D), 55V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Continuous Drain Current, Id:36A; On Resistance, Rds(on):40mohm; Rds(on) Test Voltage, Vgs:16V; Package/Case:D-Pak; Power Dissipation, Pd:110W ;RoHS Compliant: Yes
N CHANNEL MOSFET, 55V, 42A, D-PAK; Trans; N CHANNEL MOSFET, 55V, 42A, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:42A; Drain Source Voltage Vds:55V; On Resistance Rds(on):27mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; No. of Pins:3
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 42 / Drain-Source Voltage (Vds) V = 55 / ON Resistance (Rds(on)) mOhm = 27 / Gate-Source Voltage V = 16 / Fall Time ns = 15 / Rise Time ns = 84 / Turn-OFF Delay Time ns = 26 / Turn-ON Delay Time ns = 11 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 110

Alias del produttore

Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:

  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEON TECH
  • INFINEN
  • IFX
  • INFIENON
  • IR/INFINEON
  • INFINEON/IR
  • IFT
  • INFINEON/SIEMENS
  • LNFINEON
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • NFINEON
  • INFINEON/Infineon
  • INFINEON TECHNOLOGIES (ASIA

Alias del numero di parte

Questa parte può essere conosciuta con i seguenti numeri di parte alternativi:

  • IRFIRLR2905TRPBF
  • IRLR2905TRPBF.
  • SP001558410