Infineon IRLML2402PBF

Trans MOSFET N-CH Si 20V 1.2A 3-Pin SOT-23

Small Signal Field-Effect Transistor, 1.2A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

; Transistor Type:MOSFET; Transistor Polarity:N Channel; Continuous Drain Current, Id:1.2A; On Resistance, Rds(on):0.25ohm; Package/Case:SOT-23; Termination Type:SMD; Power Dissipation, Pd:0.54W; Current, Idm pulse:7.4A ;RoHS Compliant: Yes

Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 1.2 / Drain-Source Voltage (Vds) V = 20 / ON Resistance (Rds(on)) mOhm = 250 / Gate-Source Voltage V = 12 / Fall Time ns = 4.8 / Rise Time ns = 9.5 / Turn-OFF Delay Time ns = 9.7 / Turn-ON Delay Time ns = 2.5 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) mW = 540

MOSFET, N, LOGIC, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:1.2A; Drain Source Voltage Vds:20V; On Resistance Rds(on):250mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:700mV; Power Dissipation Pd:540mW; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:1.2A; Current Temperature:25°C; Device Marking:IRLML2402PBF; External Depth:2.5mm; External Length / Height:1.12mm; External Width:3.05mm; Full Power Rating Temperature:25°C; Junction Temperature Tj Min:-55°C; No. of Transistors:1; Package / Case:SOT-23; Power Dissipation Pd:540mW; Power Dissipation Pd:540mW; Pulse Current Idm:7.4A; SMD Marking:1A; Tape Width:8mm; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:700mV; Voltage Vgs Rds on Measurement:4.5V; Voltage Vgs th Min:700mV