Infineon IRG4PH30KPBF
$ 5.36
Obsolete
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
Modelli CAD
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|---|---|---|---|
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Parti alternative
Questo componente
Parti alternative
Price @ 1000
$ 5.36
$ 5.36
Stock
135,492
135,492
Authorized Distributors
1
1
Mount
Through Hole
Through Hole
Case/Package
TO-247
TO-247
Collector Emitter Breakdown Voltage
1.2 kV
1.2 kV
Max Collector Current
20 A
20 A
Power Dissipation
100 W
100 W
Collector Emitter Saturation Voltage
3.1 V
3.1 V
Reverse Recovery Time
-
-
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-06-17
Lifecycle StatusObsolete (Last Updated: 5 months ago)
LTB Date2009-08-19
LTD Date2010-02-19
Parti correlate
LittelfuseIXA12IF1200HB
Planar Series - 600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs, TO-247, RoHS
InfineonIRG4PH20KPBF
1200V UltraFast 4-20 kHz Discrete IGBT in a TO-247AC package, TO247-3, RoHS
Descrizioni
Descrizioni di Infineon IRG4PH30KPBF fornite dai suoi distributori.
IRG4PH30 Series 1200 V 20 A Through Hole UltraFast IGBT - TO-247AC
1200V UltraFast 4-20 kHz Discrete IGBT in a TO-247AC package, TO247-3, RoHS
Infineon SCT
IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 1200 V Collector-emitter saturation voltage: 4.2 V Current release time: 330 ns Power dissipation: 100 W
IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:20A; Collector Emitter Saturation Voltage, Vce(sat):4.2V; Power Dissipation, Pd:100W; Package/Case:TO-247AC ;RoHS Compliant: Yes
IGBT, TO-247; Transistor Type:IGBT; DC Collector Current:20A; Collector Emitter Voltage Vces:3.1V; Power Dissipation Pd:100W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:20A; Current Temperature:25°C; Fall Time Max:170ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247; Power Dissipation Max:100W; Power Dissipation Pd:100W; Power Dissipation Pd:100W; Pulsed Current Icm:40A; Rise Time:23ns; Short Circuit Withstand Time Min:10µs; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:1.2kV
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Specifiche tecniche
Physical
Case/PackageTO-247
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Collector Emitter Breakdown Voltage1.2 kV
Collector Emitter Saturation Voltage3.1 V
Collector Emitter Voltage (VCEO)1.2 kV
Continuous Collector Current20 A
Current Rating20 A
Element ConfigurationSingle
Fall Time170 ns
Max Collector Current20 A
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation42 W
Min Operating Temperature-55 °C
Number of Elements1
Package Quantity400
PackagingBulk
Power Dissipation100 W
Rise Time23 ns
TerminationThrough Hole
Turn-Off Delay Time220 ns
Turn-On Delay Time39 ns
Voltage Rating (DC)1.2 kV
Dimensions
Height24.99 mm
Length15.875 mm
Width5.3 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeContains Lead, Lead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità