Infineon IRFZ46ZSPBF
$ 0.693
Obsolete
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Distributore
SKU
Min
Pkg
Prezzi all'ingrosso
Cronologia dell'inventario
Tendenza a 3 mesi: -14.29%
Modelli CAD
0 models available
Parti alternative
0 parti disponibili
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2003-09-12
Lifecycle StatusObsolete (Last Updated: 5 months ago)
LTB Date2016-11-16
LTD Date2017-05-16
Parti correlate
InfineonIRLZ44ZSPBF
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 11 Milliohms;ID 51A;D2Pak;PD 80W;VGS +/-16V
InfineonIRFZ44NSPBF
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 17.5 Milliohms;ID 49A;D2Pak;PD 94W;VGS +/-20
Descrizioni
Descrizioni di Infineon IRFZ46ZSPBF fornite dai suoi distributori.
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 10.9 Milliohms;ID 51A;D2Pak;PD 82W;VGS +/-20
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
Infineon SCT
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature
HEXFET POWER MOSFET Power Field-Effect Transistor, 51A I(D), 55V, 0.0136ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET, N, 55V, 51A, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:51A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.0136ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Di
MOSFET, N, 55V, 51A, D2-PAK; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:55V; Current, Id Cont:51A; Resistance, Rds On:0.0136ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:D2-PAK; Termination Type:SMD; Alternate Case Style:D2-PAK; Current, Idm Pulse:200A; Power Dissipation:82W; Power, Pd:82W; Resistance, Rds on @ Vgs = 10V:0.0136ohm; Thermal Resistance, Junction to Case A:1.84°C/W; Voltage, Vds:55V; Voltage, Vds Max:55V; Voltage, Vgs th Max:4V
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Cronologia dell'inventario
Tendenza a 3 mesi: -14.29%
Modelli CAD
0 models available
Parti alternative
0 parti disponibili
Specifiche tecniche
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)51 A
Current Rating51 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance13.6 mΩ
Drain to Source Voltage (Vdss)55 V
Dual Supply Voltage55 V
Element ConfigurationSingle
Fall Time39 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.46 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation82 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
On-State Resistance13.6 mΩ
Package Quantity1000
PackagingBulk
Power Dissipation82 W
Rds On Max13.6 mΩ
Resistance13.6 MΩ
Rise Time63 ns
Threshold Voltage4 V
Turn-Off Delay Time37 ns
Turn-On Delay Time13 ns
Voltage Rating (DC)55 V
Dimensions
Height5.084 mm
Length10.67 mm
Width9.65 mm
Conformità
Classificazione ambientale
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità