Infineon IRFZ44NSPBF
$ 1.36
Obsolete
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1996-02-01
Lifecycle StatusObsolete (Last Updated: 4 months ago)
Parti correlate
InfineonIRFZ46ZSPBF
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 10.9 Milliohms;ID 51A;D2Pak;PD 82W;VGS +/-20
InfineonIRLZ44ZSPBF
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 11 Milliohms;ID 51A;D2Pak;PD 80W;VGS +/-16V
Descrizioni
Descrizioni di Infineon IRFZ44NSPBF fornite dai suoi distributori.
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 17.5 Milliohms;ID 49A;D2Pak;PD 94W;VGS +/-20
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
Infineon SCT
Trans MOSFET N-CH 55V 49A 3-Pin(2+Tab) D2PAK
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:49A; On Resistance, Rds(on):17.5mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:D2-PAK ;RoHS Compliant: Yes
MOSFET, N, 55V, 49A, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:49A; Drain Source Voltage Vds:55V; On Resistance Rds(on):22mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:110W; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D2-PAK; Current Id Max:49A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:1.4°C/W; Package / Case:D2-PAK; Power Dissipation Pd:110W; Power Dissipation Pd:110W; Power Dissipation on 1 Sq. PCB:3.8W; Pulse Current Idm:160A; Termination Type:SMD; Voltage Vds:55V; Voltage Vds Typ:55V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Specifiche tecniche
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)49 A
Current Rating49 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance17.5 mΩ
Drain to Source Voltage (Vdss)55 V
Dual Supply Voltage55 V
Element ConfigurationSingle
Fall Time45 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.47 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation94 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
On-State Resistance17.5 mΩ
Package Quantity1000
PackagingBulk
Power Dissipation3.8 W
Rds On Max17.5 mΩ
Recovery Time95 ns
Rise Time60 ns
TerminationSMD/SMT
Threshold Voltage2 V
Turn-Off Delay Time44 ns
Turn-On Delay Time12 ns
Voltage Rating (DC)55 V
Dimensions
Height5.084 mm
Length10.67 mm
Width9.65 mm
Conformità
Classificazione ambientale
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità