Infineon IRFU5410PBF
$ 0.944
Obsolete
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
Distributore
SKU
Min
Pkg
Prezzi all'ingrosso
Cronologia dell'inventario
Tendenza a 3 mesi: -0.91%
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Questo componente
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Price @ 1000
$ 0.944
$ 0.944
Stock
2,180,662
2,180,662
Authorized Distributors
5
5
Mount
Through Hole
Through Hole
Case/Package
TO-251-3
TO-251-3
Drain to Source Voltage (Vds)
-100 V
-100 V
Continuous Drain Current (ID)
13 A
13 A
Threshold Voltage
-4 V
-4 V
Rds On Max
205 mΩ
205 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
66 W
66 W
Input Capacitance
760 pF
760 pF
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-06-01
Lifecycle StatusObsolete (Last Updated: 8 months ago)
LTB Date2025-03-31
LTD Date2025-09-30
Parti correlate
InfineonIRLU120NPBF
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.185Ohm;ID 10A;I-Pak (TO-251AA);PD 48W
InfineonIRFU120NPBF
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.21Ohm;ID 9.4A;I-Pak (TO-251AA);PD 48W
Descrizioni
Descrizioni di Infineon IRFU5410PBF fornite dai suoi distributori.
MOSFET, Power;P-Ch;VDSS -100V;RDS(ON) 0.205Ohm;ID -13A;I-Pak (TO-251AA);PD 66W
Single P-Channel 100 V 205 mOhm 58 nC HEXFET® Power Mosfet - IPAK
-100V Single N-Channel HEXFET Power MOSFET in a I-Pak package, IPAK-3, RoHS
Infineon SCT
HEXFET POWER MOSFET Power Field-Effect Transistor, 13A I(D), 100V, 0.205ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
66W(Tc) 20V 4V@ 250µA 58nC@ 10 V 1individualPChannel 100V 205mΩ@ 7.8A,10V 13A 760pF@25V IPAK，TO-251AA Through hole mounting
MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-100V; Continuous Drain Current, Id:-13A; On Resistance, Rds(on):205mohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:I-PAK ;RoHS Compliant: Yes
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Cronologia dell'inventario
Tendenza a 3 mesi: -0.91%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
1 parte disponibile
Specifiche tecniche
Physical
Case/PackageTO-251-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)13 A
Current Rating-13 A
Drain to Source Breakdown Voltage-100 V
Drain to Source Resistance205 mΩ
Drain to Source Voltage (Vds)-100 V
Dual Supply Voltage-100 V
Element ConfigurationSingle
Fall Time46 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance760 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation66 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Nominal Vgs-4 V
Number of Channels1
Number of Elements1
On-State Resistance205 mΩ
Package Quantity3000
PackagingBulk
Power Dissipation66 W
Rds On Max205 mΩ
Rise Time58 ns
TerminationThrough Hole
Threshold Voltage-4 V
Turn-Off Delay Time45 ns
Turn-On Delay Time15 ns
Voltage Rating (DC)-100 V
Dimensions
Height9.75 mm
Lead Length9.65 mm
Lead Pitch2.28 mm
Length6.7056 mm
Width2.3876 mm
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeContains Lead, Lead Free
Radiation HardeningNo
REACH SVHCAffected
RoHSCompliant
Dichiarazioni di conformità