Infineon IRLU120NPBF

MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.185Ohm;ID 10A;I-Pak (TO-251AA);PD 48W

MOSFET N-CH 100V 10A IPAK N-Channel 100 V 10A (Tc) 48W (Tc) Through Hole IPAK (TO-251AA)

Single N-Channel 100 V 0.265 Ohm 20 nC HEXFET® Power Mosfet - TO-251AA

100V Single N-Channel HEXFET Power MOSFET in a I-Pak package, IPAK-3, RoHS

Power Field-Effect Transistor, 10A I(D), 100V, 0.225ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA

MOSFET Operating temperature: -55...175 °C Drive: logic level Housing type: IPAK Polarity: N Variants: Enhancement mode Power dissipation: 48 W

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

MOSFET, N, 100V, 11A, I-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:100V; On Resistance Rds(on):185mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:48W; Transistor Case Style:I-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:I-PAK; Current Id Max:10A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:3.2°C/W; On State resistance @ Vgs = 10V:185mohm; Package / Case:IPAK; Power Dissipation Pd:48W; Power Dissipation Pd:48W; Pulse Current Idm:35A; Termination Type:Through Hole; Voltage Vds:100V; Voltage Vds Typ:100V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2V