Infineon IRFSL4010PBF
$ 1.865
Obsolete
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Schede tecniche e documenti
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-10-06
Lifecycle StatusObsolete (Last Updated: 7 months ago)
Parti correlate
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MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 3.3Milliohms;ID 170A;TO-262;PD 300W;VF 1.3V
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MOSFET N-CH 100V 180A TO262 / N-Channel 100 V 180A (Tc) 370W (Tc) Through Hole TO-262
onsemiFDI045N10A-F102
N-Channel 100 V 4.5 mOhm Through Hole POWERTRENCH MOSFET - I2PAK (TO-262)
InfineonIRFSL3107PBF
75V Single N-Channel HEXFET Power MOSFET in a TO-262 package, TO262-3, RoHS
Descrizioni
Descrizioni di Infineon IRFSL4010PBF fornite dai suoi distributori.
Single N-Channel 100 V 4.7 mOhm 143 nC HEXFET® Power Mosfet - TO-262-3
MOSFET N-CH 100V 180A TO262 N-Channel 100 V 180A (Tc) 375W (Tc) Through Hole TO-262
High Efficiency Synchronous Rectification in SMPS | MOSFET N-CH 100V 180A TO-262
Power Field-Effect Transistor, 180A I(D), 100V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
375W(Tc) 20V 4V@ 250µA 215nC@ 10 V 1individualNChannel 100V 4.7mΩ@ 106A,10V 180A 9.575nF@50V TO-262 Through hole mounting 10.2mm*4.5mm*9.45mm
Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:180A; On Resistance Rds(On):0.0039Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Msl:- Rohs Compliant: Yes
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 180 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 3.9 / Gate-Source Voltage V = 20 / Fall Time ns = 77 / Rise Time ns = 86 / Turn-OFF Delay Time ns = 100 / Turn-ON Delay Time ns = 21 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-262 / Pins = 3 / Mounting Type = Through Hole / MSL = Level-1 / Packaging = Tube / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 375
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Cronologia dell'inventario
Tendenza a 3 mesi: -0.01%
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Specifiche tecniche
Physical
Case/PackageTO-262
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)180 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance4.7 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time77 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance9.575 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation375 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance4.7 mΩ
Package Quantity1000
Power Dissipation375 W
Rds On Max4.7 mΩ
Resistance4.7 MΩ
Rise Time86 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time100 ns
Turn-On Delay Time21 ns
Dimensions
Height15.1 mm
Length10.668 mm
Width4.826 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per Infineon IRFSL4010PBF.
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità