onsemi FDI045N10A-F102
$ 2.11
Production
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| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DigiKey | FDI045N10A-F102-ND | 222 | 1 | Tube | ||||||||
| Newark | FDI045N10A-F102 | 0 | 100 | |||||||||
| Onlinecomponents.com | FDI045N10A-F102 | 0 | 250 | Bulk | ||||||||
| Avnet | FDI045N10A-F102 | 0 | 1K | 21h | ||||||||
| Master Electronics | FDI045N10A-F102 | 0 | 250 |
Cronologia dell'inventario
Tendenza a 3 mesi: -53.81%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2011-07-26
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Parti correlate
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InfineonAUIRFSL4310
Automotive Q101 100V Single N-Channel HEXFET Power MOSFET in a TO-262 Package
Descrizioni
Descrizioni di onsemi FDI045N10A-F102 fornite dai suoi distributori.
N-Channel 100 V 4.5 mOhm Through Hole POWERTRENCH MOSFET - I2PAK (TO-262)
PowerTrench® MOSFET, N-Channel, 100V, 164A, 4.5mΩ
Power MOSFET, N Channel, 100 V, 164 A, 0.0038 ohm, I2PAK, Through Hole
Power Field-Effect Transistor, 120A I(D), 100V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: -53.81%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Specifiche tecniche
Physical
Case/PackageTO-262
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight2.084 g
Technical
Continuous Drain Current (ID)120 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance4.5 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time15 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance5.27 nF
Max Operating Temperature175 °C
Max Power Dissipation263 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation263 W
Rds On Max4.5 mΩ
Rise Time26 ns
Turn-Off Delay Time50 ns
Turn-On Delay Time23 ns
Dimensions
Height9.65 mm
Length10.29 mm
Width4.83 mm
Conformità
Classificazione ambientale
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità