Infineon IRFS7762TRLPBF
$ 1.83
Obsolete
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Rochester Electronics | IRFS7762TRLPBF | 760 | 19h | |||||||||
| RS (Formerly Allied Electronics) | IRFS7762TRLPBF | 0 | 5 | Bulk | 12h | |||||||
| Farnell | IRFS7762TRLPBF | 0 | 1 | Cut Tape | 19h | |||||||
| Microchip USA | IRFS7762TRLPBF | 150 | 300 | Bulk | 12h | |||||||
| Win Source | WS-875186 | 20.000 | 30 | 20h |
Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
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1 parte disponibile
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Scarica il simbolo Infineon IRFS7762TRLPBF, l'impronta e i modelli STEP 3D dai nostri partner di fiducia.
| FONTE | eCAD | mCAD | FILE |
|---|---|---|---|
 EE Concierge | SimboloImpronta |
Il sito del partner si aprirà in una nuova scheda quando si scaricano i modelli CAD
Scaricando i modelli CAD da Octopart, accetti i nostri Termini e condizioni e l'Informativa sulla privacy.
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Questo componente
Parti alternative
Price @ 1000
$ 1.83
$ 1.299
Stock
54,670
38,779
Authorized Distributors
3
3
Mount
Surface Mount
Surface Mount
Case/Package
D2PAK
D2PAK
Drain to Source Voltage (Vdss)
75 V
75 V
Continuous Drain Current (ID)
85 A
85 A
Threshold Voltage
-
-
Rds On Max
6.7 mΩ
6.7 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
140 W
140 W
Input Capacitance
4.44 nF
4.44 nF
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2014-08-20
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2021-11-30
LTD Date2022-05-31
Parti correlate
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75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
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SQM110N05-06L Series 55 V 110 A Automotive N-Channel Mosfet - TO-263-3
InfineonIRFS7540TRLPBF
60V Single N-Channel HEXFET Power MOSFET in a Lead Free D2-Pak package, D2PAK-3, RoHS
Descrizioni
Descrizioni di Infineon IRFS7762TRLPBF fornite dai suoi distributori.
MOSFET N-CH 75V 85A D2PAK / N-Channel 75 V 85A (Tc) 140W (Tc) Surface Mount PG-TO263-3
Single N-Channel 75 V 6.7 mOhm 85 nC HEXFET® Power Mosfet - D2PAK
75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
Infineon SCT
TAPE AND REEL / MOSFET, 75V, 104A, 6.3 Ohm, 88 nC, D2PAK
Power Field-Effect Transistor, 85A I(D), 75V, 0.0067ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET, N-CH, 75V, 85A, TO-263AB; Transistor Polarity: N Channel; Continuous Drain Current Id: 85A; Drain Source Voltage Vds: 75V; On Resistance Rds(on): 0.0056ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.7V; P
Benefits: Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability; Lead-Free, RoHS Compliant; StrongIRFET
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
1 parte disponibile
Specifiche tecniche
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Terminals2
Weight3.949996 g
Technical
Continuous Drain Current (ID)85 A
Drain to Source Breakdown Voltage75 V
Drain to Source Resistance6.7 mΩ
Drain to Source Voltage (Vdss)75 V
Element ConfigurationSingle
Fall Time40 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance4.44 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation140 W
Min Breakdown Voltage75 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance6.7 mΩ
Package Quantity800
Power Dissipation140 W
Rds On Max6.7 mΩ
Rise Time49 ns
Schedule B8541290080
Turn-Off Delay Time57 ns
Turn-On Delay Time11 ns
Dimensions
Height5.084 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità