Infineon IRFS7537PBF
$ 1.01
Obsolete
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Rochester Electronics | IRFS7537PBF | 57 | 22h | |||||||||
| RS (Formerly Allied Electronics) | IRFS7537PBF | 0 | 800 | Bulk | 15h | |||||||
| Farnell | IRFS7537PBF | 0 | 1 | 23h | ||||||||
| Win Source | WS-875184 | 30.200 | 65 | 23h | ||||||||
| Worldway Electronics | IRFS7537PBF | 18.834 | 7 | Tube | 22h |
Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
1 parte disponibile
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per Infineon IRFS7537PBF.
Parti alternative
Questo componente
Parti alternative
Price @ 1000
$ 1.01
$ 0.735
Stock
258,818
361,991
Authorized Distributors
3
6
Mount
Surface Mount
Surface Mount
Case/Package
D2PAK
D2PAK
Drain to Source Voltage (Vdss)
60 V
60 V
Continuous Drain Current (ID)
173 A
173 A
Threshold Voltage
3.7 V
-
Rds On Max
3.3 mΩ
3.3 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
230 W
230 W
Input Capacitance
7.02 nF
7.02 nF
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2013-09-17
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2018-12-15
LTD Date2019-06-15
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MOSFET N-CH 60V 180A H2PAK-2 / N-Channel 60 V 180A (Tc) 300W (Tc) Surface Mount H2Pak-2
Descrizioni
Descrizioni di Infineon IRFS7537PBF fornite dai suoi distributori.
60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
Infineon SCT
Single N-Channel 60 V 3.3 mOhm 142 nC HEXFET® Power Mosfet - D2PAK
Trans MOSFET N-CH 60V 173A 3-Pin(2+Tab) D2PAK Tube
Power Field-Effect Transistor, 173A I(D), 60V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability
MOSFET, N CH, 60V, 173A, TO-263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 173A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.00275ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.7V
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
1 parte disponibile
Specifiche tecniche
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)173 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance3.3 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time84 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance7.02 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation230 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance3.3 mΩ
Package Quantity1000
Power Dissipation230 W
Rds On Max3.3 mΩ
Rise Time105 ns
Threshold Voltage3.7 V
Turn-Off Delay Time82 ns
Turn-On Delay Time15 ns
Dimensions
Height5.084 mm
Length10.67 mm
Width9.65 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per Infineon IRFS7537PBF.
Conformità
Classificazione ambientale
Lead FreeLead Free
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità