onsemi FDB039N06
Obsolete
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
Modelli CAD
Scarica il simbolo onsemi FDB039N06, l'impronta e i modelli STEP 3D dai nostri partner di fiducia.
| FONTE | eCAD | mCAD | FILE |
|---|---|---|---|
 Ultra Librarian | SimboloImpronta | Scarica |
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2009-08-11
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2013-09-11
LTD Date2014-03-11
Parti correlate
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60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
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60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
InfineonIRFS7734TRLPBF
75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
STMicroelectronicsSTH265N6F6-2AG
MOSFET N-CH 60V 180A H2PAK-2 / N-Channel 60 V 180A (Tc) 300W (Tc) Surface Mount H2Pak-2
Descrizioni
Descrizioni di onsemi FDB039N06 fornite dai suoi distributori.
Trans MOSFET N-CH 60V 174A 3-Pin(2+Tab) D2PAK Tube
N-Channel PowerTrench® MOSFET 60V, 174A, 3.9mΩ
Power Field-Effect Transistor, 120A I(D), 60V, 0.0039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Specifiche tecniche
Physical
Case/PackageTO-263-3
MountSurface Mount
Number of Terminals2
Weight1.31247 g
Technical
Continuous Drain Current (ID)120 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance3.9 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time24 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance8.235 nF
Max Operating Temperature175 °C
Max Power Dissipation231 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation231 W
Rds On Max3.9 mΩ
Rise Time40 ns
Schedule B8541290080
Turn-Off Delay Time55 ns
Turn-On Delay Time30 ns
Conformità
Classificazione ambientale
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità