Infineon IRFS4410TRLPBF
$ 1.61
Obsolete
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Rochester Electronics | IRFS4410TRLPBF | 3135 | 10h | |||||||||
| RS (Formerly Allied Electronics) | IRFS4410TRLPBF | 0 | 3200 | Bulk | 2h | |||||||
| Farnell | IRFS4410TRLPBF | 0 | 1 | Cut Tape | 1d | |||||||
| Win Source | WS-IRFS4410TRLPBF | 619 | 11 | 11h | ||||||||
| Worldway Electronics | IRFS4410TRLPBF | 13.482 | 7 | Tape & Reel | 10h |
Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
1 parte disponibile
Modelli CAD
Scarica il simbolo Infineon IRFS4410TRLPBF, l'impronta e i modelli STEP 3D dai nostri partner di fiducia.
| FONTE | eCAD | mCAD | FILE |
|---|---|---|---|
 EE Concierge | SimboloImpronta | ||
 SnapEDA | Impronta | Scarica |
Il sito del partner si aprirà in una nuova scheda quando si scaricano i modelli CAD
Scaricando i modelli CAD da Octopart, accetti i nostri Termini e condizioni e l'Informativa sulla privacy.
Parti alternative
Questo componente
Parti alternative
Price @ 1000
$ 1.61
$ 2.414
Stock
247,560
139,402
Authorized Distributors
3
4
Mount
Surface Mount
-
Case/Package
D2PAK
SOT
Drain to Source Voltage (Vdss)
100 V
100 V
Continuous Drain Current (ID)
75 A
75 A
Threshold Voltage
4 V
-
Rds On Max
10 mΩ
8.8 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
200 W
230 W
Input Capacitance
5.15 nF
8.25 nF
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2004-11-18
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2024-09-30
LTD Date2025-03-31
Parti correlate
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MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 5.9Milliohms;ID 106A;D2Pak;PD 200W;VGS +/-2
STMicroelectronicsSTB120NF10T4
N-channel 100 V, 0.009 Ohm, 110 A, STripFET(TM) II Power MOSFET in D2PAK package
STMicroelectronicsSTB80NF10T4
N-Channel 100V - 0.012Ohm - 80A - D2PAK LOW GATE CHARGE STripFET(TM) MOSFET
Descrizioni
Descrizioni di Infineon IRFS4410TRLPBF fornite dai suoi distributori.
Single N-Channel 100 V 10 mOhm 180 nC HEXFET® Power Mosfet - D2PAK
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
Infineon SCT
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature
Trans MOSFET N-CH 100V 96A 3-Pin (2+Tab) D2PAK T/R
Power Field-Effect Transistor, 75A I(D), 100V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET, N-CH, 100V, 88A, TO-263AB-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 88A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.008o; Available until stocks are exhausted Alternative available
Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:88A; On Resistance Rds(On):0.008Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V Rohs Compliant: Yes
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
1 parte disponibile
Specifiche tecniche
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)75 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance10 mΩ
Drain to Source Voltage (Vdss)100 V
Fall Time50 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance5.15 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation200 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance10 mΩ
Package Quantity800
Power Dissipation200 W
Rds On Max10 mΩ
Resistance10 MΩ
Rise Time80 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time55 ns
Turn-On Delay Time24 ns
Dimensions
Height5.084 mm
Length10.668 mm
Width9.65 mm
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità