Infineon IRFR540ZTRLPBF
$ 0.517
Production
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Rochester Electronics | IRFR540ZTRLPBF | 2827 | 1d | |||||||||
| DigiKey | 448-IRFR540ZTRLPBFCT-ND | 28 | 1 | Cut Tape | ||||||||
| RS (Formerly Allied Electronics) | IRFR540ZTRLPBF | 0 | 3K | Bulk | 16h | |||||||
| Future Electronics | IRFR540ZTRLPBF | 0 | 3K | Tape & Reel | ||||||||
| Avnet | IRFR540ZTRLPBF | 0 | 3K | 2d |
Cronologia dell'inventario
Tendenza a 3 mesi: -87.24%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
1 parte disponibile
Parti alternative
Questo componente
Parti alternative
Price @ 1000
$ 0.517
$ 0.506
$ 0.506
Stock
193,028
535,591
535,591
Authorized Distributors
6
6
6
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
DPAK
DPAK
DPAK
Drain to Source Voltage (Vdss)
100 V
100 V
100 V
Continuous Drain Current (ID)
35 A
35 A
35 A
Threshold Voltage
-
-
-
Rds On Max
28.5 mΩ
28.5 mΩ
28.5 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
Power Dissipation
91 W
91 W
91 W
Input Capacitance
1.69 nF
1.69 nF
1.69 nF
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2005-02-03
Lifecycle StatusProduction (Last Updated: 4 months ago)
Parti correlate
InfineonAUIRFR2607Z
Automotive Q101 75V Single N-Channel HEXFET Power MOSFET in a D-Pak Package, DPAK-3, RoHS
InfineonAUIRFR2607ZTRL
Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 7.3pF 50Volts C0G +/-0.05pF
STMicroelectronicsSTD30N10F7
N-channel 100 V, 0.02 Ohm typ., 35 A STripFET F7 Power MOSFET in a DPAK package
Descrizioni
Descrizioni di Infineon IRFR540ZTRLPBF fornite dai suoi distributori.
Power MOSFET, N Channel, 100 V, 35 A, 28.5 Milliohms, TO-252 (DPAK), 3 Pins, Surface Mount
Trans MOSFET N-CH Si 100V 35A Automotive 3-Pin(2+Tab) DPAK T/R
100V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 35A I(D), 100V, 0.0285ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature | Target Applications: Lighting LED
MOSFET; Transistor Type:MOSFET; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:35A; Package/Case:DPAK; Leaded Process Compatible:Yes ;RoHS Compliant: Yes
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Cronologia dell'inventario
Tendenza a 3 mesi: -87.24%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
1 parte disponibile
Specifiche tecniche
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)35 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance28.5 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time34 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.69 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature150 °C
Max Power Dissipation91 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance28.5 mΩ
Package Quantity3000
Power Dissipation91 W
Rds On Max28.5 mΩ
Rise Time42 ns
Schedule B8541290080
Turn-Off Delay Time43 ns
Turn-On Delay Time14 ns
Dimensions
Height2.52 mm
Length6.7056 mm
Width6.22 mm
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità