Infineon IRFR540ZPBF
$ 1.09
Obsolete
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
Modelli CAD
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Parti alternative
Questo componente
Parti alternative
Price @ 1000
$ 1.09
$ 0.506
$ 0.506
Stock
158,930
548,508
548,508
Authorized Distributors
2
6
6
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
DPAK
DPAK
DPAK
Drain to Source Voltage (Vdss)
100 V
100 V
100 V
Continuous Drain Current (ID)
35 A
35 A
35 A
Threshold Voltage
4 V
-
-
Rds On Max
28.5 mΩ
28.5 mΩ
28.5 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
Power Dissipation
91 W
91 W
91 W
Input Capacitance
1.69 nF
1.69 nF
1.69 nF
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2005-02-03
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2018-12-15
LTD Date2019-06-15
Parti correlate
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Trans MOSFET N-CH Si 100V 35A Automotive 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 100V 35A DPAK
InfineonIRFR540ZTRLPBF
Power MOSFET, N Channel, 100 V, 35 A, 28.5 Milliohms, TO-252 (DPAK), 3 Pins, Surface Mount
InfineonAUIRFR540Z
Automotive Q101 100V Single N-Channel HEXFET Power MOSFET in a D-Pak Package, DPAK-3, RoHS
STMicroelectronicsSTD30N10F7
N-channel 100 V, 0.02 Ohm typ., 35 A STripFET F7 Power MOSFET in a DPAK package
STMicroelectronicsSTD20NF10T4
N-channel 100 V, 0.038 Ohm typ., 25 A STripFET II Power MOSFET in a DPAK package
Descrizioni
Descrizioni di Infineon IRFR540ZPBF fornite dai suoi distributori.
Single N-Channel 100 V 28.5 mOhm 39 nC HEXFET® Power Mosfet - DPAK
100V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 35A I(D), 100V, 0.0285ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature | Target Applications: Lighting LED
MOSFET, N-CH 100V 35A DPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:100V; On Resistance Rds(on):28.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:91W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:35A; Package / Case:D-PAK; Power Dissipation Pd:91W; Power Dissipation Pd:91W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:100V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Specifiche tecniche
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)35 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance28.5 mΩ
Drain to Source Voltage (Vdss)100 V
Dual Supply Voltage100 V
Element ConfigurationSingle
Fall Time34 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.69 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature150 °C
Max Power Dissipation91 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
On-State Resistance28.5 mΩ
Package Quantity3000
Power Dissipation91 W
Rds On Max28.5 mΩ
Recovery Time48 ns
Rise Time42 ns
Schedule B8541290080
TerminationSMD/SMT
Threshold Voltage4 V
Turn-Off Delay Time43 ns
Turn-On Delay Time14 ns
Dimensions
Height2.52 mm
Length6.7056 mm
Width6.22 mm
Conformità
Classificazione ambientale
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità