Infineon IRFR4615PBF
$ 2.05
Obsolete
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
Modelli CAD
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Parti alternative
Questo componente
Parti alternative
Price @ 1000
$ 2.05
$ 0.682
Stock
1,085,995
1,716,338
Authorized Distributors
2
6
Mount
Surface Mount
Surface Mount
Case/Package
DPAK
DPAK
Drain to Source Voltage (Vdss)
150 V
150 V
Continuous Drain Current (ID)
33 A
33 A
Threshold Voltage
5 V
5 V
Rds On Max
42 mΩ
42 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
144 W
144 W
Input Capacitance
1.75 nF
1.75 nF
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-12-18
Lifecycle StatusObsolete (Last Updated: 4 months ago)
Parti correlate
InfineonIRFR4615TRLPBF
N CH POWER MOSFET, HEXFET, 150V, 33A, DPAK; Transistor Polarity:N Channel; Conti
InfineonAUIRFR4615
Automotive Q101 150V Single N-Channel HEXFET Power MOSFET in a D-Pak Package, DPAK-3, RoHS
VishaySQD25N15-52_GE3
MOSFET N-CH 150V 25A TO252 / Trans MOSFET N-CH 150V 25A Automotive 3-Pin(2+Tab) DPAK T/R
Descrizioni
Descrizioni di Infineon IRFR4615PBF fornite dai suoi distributori.
Benefits: RoHS Compliant | Target Applications: Battery Operated Drive; Lighting LED
Single N-Channel 150 V 42 mOhm 26 nC HEXFET® Power Mosfet - DPAK
150V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Infineon SCT
Trans MOSFET N-CH 150V 33A 3-Pin(2+Tab) DPAK Bulk/Tube
Power Field-Effect Transistor, 33A I(D), 150V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
MOSFET, N-CH 150V 33A DPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:150V; On Resistance Rds(on):42mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:144W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:33A; Package / Case:D-PAK; Power Dissipation Pd:144W; Power Dissipation Pd:144W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:150V; Voltage Vgs Max:3V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Specifiche tecniche
Physical
Case/PackageDPAK
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)33 A
Drain to Source Breakdown Voltage150 V
Drain to Source Resistance42 mΩ
Drain to Source Voltage (Vdss)150 V
Dual Supply Voltage150 V
Element ConfigurationSingle
Fall Time20 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.75 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation144 W
Min Breakdown Voltage150 V
Min Operating Temperature-55 °C
Nominal Vgs5 V
Number of Channels1
Number of Elements1
On-State Resistance42 mΩ
Package Quantity3000
Power Dissipation144 W
Rds On Max42 mΩ
Resistance42 MΩ
Rise Time35 ns
TerminationSMD/SMT
Threshold Voltage5 V
Turn-Off Delay Time25 ns
Turn-On Delay Time15 ns
Dimensions
Height2.52 mm
Length6.7056 mm
Width6.22 mm
Conformità
Classificazione ambientale
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità