Infineon IRFR24N15DPBF
$ 1.86
Obsolete
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-06-07
Lifecycle StatusObsolete (Last Updated: 4 months ago)
Parti correlate
InfineonIRFR18N15DTRPBF
MOSFET, Power;N-Ch;VDSS 150V;RDS(ON) 0.125Ohm;ID 18A;D-Pak (TO-252AA);PD 110W
InfineonIRFR4615TRLPBF
N CH POWER MOSFET, HEXFET, 150V, 33A, DPAK; Transistor Polarity:N Channel; Conti
Descrizioni
Descrizioni di Infineon IRFR24N15DPBF fornite dai suoi distributori.
Single N-Channel 150 V 95 mOhm 30 nC HEXFET® Power Mosfet - TO-252AA
150V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Infineon SCT
HEXFET POWER MOSFET Power Field-Effect Transistor, 24A I(D), 150V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design
MOSFET, N, 150V, 24A, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:24A; Drain Source Voltage Vds:150V; On Resistance Rds(on):95mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:140W; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D-PAK; Current Id Max:24A; Junction to Case Thermal Resistance A:1.1°C/W; On State resistance @ Vgs = 10V:95ohm; Package / Case:DPAK; Power Dissipation Pd:140W; Power Dissipation Pd:140W; Pulse Current Idm:96A; Termination Type:SMD; Voltage Vds Typ:150V; Voltage Vgs Max:5V; Voltage Vgs Rds on Measurement:10V
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Specifiche tecniche
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)24 A
Current Rating24 A
Drain to Source Breakdown Voltage150 V
Drain to Source Resistance95 mΩ
Drain to Source Voltage (Vdss)150 V
Dual Supply Voltage150 V
Element ConfigurationSingle
Fall Time15 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance890 pF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature150 °C
Max Power Dissipation140 W
Min Breakdown Voltage150 V
Min Operating Temperature-55 °C
Nominal Vgs5 V
Number of Elements1
On-State Resistance95 mΩ
Package Quantity3000
Power Dissipation140 W
Rds On Max95 mΩ
Resistance95 Ω
Rise Time53 ns
Threshold Voltage5 V
Turn-Off Delay Time19 ns
Turn-On Delay Time11 ns
Voltage Rating (DC)150 V
Dimensions
Height2.2606 mm
Length6.7056 mm
Width2.39 mm
Conformità
Classificazione ambientale
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità