Infineon IRFR220NTRLPBF

MOSFET, Power; N-Ch; VDSS 200V; RDS(ON) 600 Milliohms; ID 5A; D-Pak (TO-252AA); PD 43W
$ 0.389
Obsolete
Pagina del produttoreScheda dati

Prezzo e stock

Vedi tutte le interruzioni di prezzo
DistributorSKUMinPkg
Rochester Electronics
2
IRFR220NTRLPBF11.530
4h
Arrow ElectronicsIRFR220NTRLPBF32391
RS (Formerly Allied Electronics)IRFR220NTRLPBF03KBulk
17h
Farnell
3
IRFR220NTRLPBF05Cut Tape
4h
Mouser942-IRFR220NTRLPBF3891Tape & Reel

Schede tecniche e documenti

Scarica le schede tecniche e la documentazione del produttore per Infineon IRFR220NTRLPBF.

IHS

Datasheet11 pagine21 anni fa

Newark

RS (Formerly Allied Electronics)

Cronologia dell'inventario

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Parti alternative

Questo componente
Parti alternative
InfineonIRFR220NTRLPBF
InfineonIRFR220NTRPBF
Price @ 1000
$ 0.389
$ 0.449
Stock
323,713
1,336,460
Authorized Distributors
5
6
Mount
Surface Mount
Surface Mount
Case/Package
DPAK
DPAK
Drain to Source Voltage (Vdss)
200 V
200 V
Continuous Drain Current (ID)
5 A
5 A
Threshold Voltage
-
4 V
Rds On Max
600 mΩ
600 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
43 W
43 W
Input Capacitance
300 pF
300 pF

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2004-03-02
Lifecycle StatusObsolete (Last Updated: 4 months ago)

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Descrizioni

Descrizioni di Infineon IRFR220NTRLPBF fornite dai suoi distributori.

MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 600 Milliohms;ID 5A;D-Pak (TO-252AA);PD 43W
RS (Formerly Allied Electronics)
Single N-Channel 200 V 600 mOhm 23 nC HEXFET® Power Mosfet - TO-252AA
Future Electronics
200V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Infineon SCT
SMPS MOSFET Power Field-Effect Transistor, 5A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
ComSIT Distribution GmbH
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:200V; Continuous Drain Current, Id:5A; On Resistance, Rds(on):600mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:DPAK ;RoHS Compliant: Yes
Newark
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
Infineon
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 5 / Drain-Source Voltage (Vds) V = 200 / ON Resistance (Rds(on)) mOhm = 600 / Gate-Source Voltage V = 20 / Fall Time ns = 12 / Rise Time ns = 11 / Turn-OFF Delay Time ns = 20 / Turn-ON Delay Time ns = 6.4 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 43
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Immagini

Infineon
Newark
Farnell
TME
Future Electronics
LZChips
Rochester Electronics

Alias del produttore

Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:

  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEON TECH
  • INFINEN
  • IFX
  • INFIENON
  • IR/INFINEON
  • INFINEON/IR
  • IFT
  • INFINEON/SIEMENS
  • LNFINEON
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • NFINEON
  • INFINEON/Infineon
  • INFINEON TECHNOLOGIES (ASIA

Alias del numero di parte

Questa parte può essere conosciuta con i seguenti numeri di parte alternativi:

  • SP001567454