Infineon IRFHM830TR2PBF
$ 1.12
Obsolete
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RS (Formerly Allied Electronics) | IRFHM830TR2PBF | 0 | 800 | Bulk | 5h | |||||||
| Farnell | IRFHM830TR2PBF | 0 | 1 | 11h | ||||||||
| Microchip USA | IRFHM830TR2PBF | 268 | 150 | Tray | 6h | |||||||
| Component Stockers USA | IRFHM830TR2PBF | 311 | 2d | |||||||||
| Worldway Electronics | IRFHM830TR2PBF | 12.865 | 7 | Tape & Reel | 12h |
Modelli CAD
Scarica il simbolo Infineon IRFHM830TR2PBF, l'impronta e i modelli STEP 3D dai nostri partner di fiducia.
| FONTE | eCAD | mCAD | FILE |
|---|---|---|---|
 EE Concierge | SimboloImpronta |
Il sito del partner si aprirà in una nuova scheda quando si scaricano i modelli CAD
Scaricando i modelli CAD da Octopart, accetti i nostri Termini e condizioni e l'Informativa sulla privacy.
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-09-09
Lifecycle StatusObsolete (Last Updated: 4 months ago)
Parti correlate
InfineonIRFHM830DTRPBF
30V Single N-Channel HEXFET Power MOSFET in a 3.3mm X 3.3mm PQFN package, PG-TSDSON-8, RoHS
InfineonIRLHM630TRPBF
INFINEON IRLHM630TRPBF MOSFET Transistor, N Channel, 21 A, 30 V, 2.8 mohm, 4.5 V, 800 mV
Descrizioni
Descrizioni di Infineon IRFHM830TR2PBF fornite dai suoi distributori.
30V Single N-Channel HEXFET Power MOSFET in a 3.3mm X 3.3mm PQFN package
Trans MOSFET N-CH 30V 21A 8-Pin PQFN EP T/R
HEXFET POWER MOSFET Power Field-Effect Transistor, 21A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET,W DIODE,N CH,30V,21A,PQFN33; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.003ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:2.7W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PQFN; No. of Pins:8; SVHC:No SVHC (19-Dec-2011); Voltage Vgs Max:20V
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Specifiche tecniche
Physical
Case/PackageVQFN
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)21 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance6 mΩ
Drain to Source Voltage (Vdss)30 V
Fall Time9.2 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.155 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation37 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs1.8 V
Number of Channels1
Number of Elements1
Power Dissipation2.7 W
Rds On Max3.8 mΩ
Recovery Time26 ns
Rise Time25 ns
Schedule B8541290080
Threshold Voltage1.8 V
Turn-Off Delay Time13 ns
Turn-On Delay Time12 ns
Dimensions
Height900 µm
Length3.2766 mm
Width3.3 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità