Infineon IRFH5255TR2PBF
$ 0.5
Obsolete
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-02-08
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2014-05-12
LTD Date2014-11-12
Parti correlate
InfineonIRFHM830DTRPBF
30V Single N-Channel HEXFET Power MOSFET in a 3.3mm X 3.3mm PQFN package, PG-TSDSON-8, RoHS
InfineonIRFHM830TRPBF
Single N-Channel 30 V 6 mOhm 15 nC HEXFET® Power Mosfet - PQFN 3.3 x 3.3 mm
InfineonIRFHM830TR2PBF
30V Single N-Channel HEXFET Power MOSFET in a 3.3mm X 3.3mm PQFN package
Descrizioni
Descrizioni di Infineon IRFH5255TR2PBF fornite dai suoi distributori.
25V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package
MOSFET, 25V, 51A, 6 mOhm, 7 nC Qg, Low Rg, PQFN
Trans MOSFET N-CH 25V 15A 8-Pin PQFN T/R
HEXFET POWER MOSFET Power Field-Effect Transistor, 15A I(D), 25V, 0.0109ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, N CH, 25V, 51A, PQFN56; Transistor Polarity:N Channel; Continuous Drain Current Id:15A; Drain Source Voltage Vds:25V; On Resistance Rds(on):5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:26W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PQFN; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:51A; Power Dissipation Pd:26W; Voltage Vgs Max:20V
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Specifiche tecniche
Physical
Case/PackageVQFN
MountSurface Mount
Number of Pins8
Number of Terminals5
Technical
Continuous Drain Current (ID)15 A
Drain to Source Breakdown Voltage25 V
Drain to Source Resistance10.9 mΩ
Drain to Source Voltage (Vdss)25 V
Fall Time3.8 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance988 pF
Max Operating Temperature150 °C
Max Power Dissipation26 W
Min Breakdown Voltage25 V
Min Operating Temperature-55 °C
Nominal Vgs1.8 V
Number of Elements1
Power Dissipation26 W
Rds On Max6 mΩ
Recovery Time17 ns
Rise Time10.7 ns
Threshold Voltage1.8 V
Turn-Off Delay Time6.5 ns
Turn-On Delay Time7.9 ns
Dimensions
Height838.2 µm
Length5.9944 mm
Width5 mm
Conformità
Classificazione ambientale
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità